Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region

► Low RESURF effectiveness found in conventional P-channel LDMOS on thin-SOI. ► NBL layer is inserted in the drift region by high energy implantation. ► Significant improvement of static performance in the proposed LDPMOS. ► Further improvement is observed by using STI partially covering the drift r...

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Veröffentlicht in:	Solid-state electronics 2012-04, Vol.70, p.8-13
Hauptverfasser:	Cortés, I., Toulon, G., Morancho, F., Flores, D., Hugonnard-Bruyère, E., Villard, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS Compound structure devices Design. Technologies. Operation analysis. Testing Drift Electronics Engineering Sciences Exact sciences and technology Integrated circuits LDMOS NBL Optimization P-channel RESURF Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TCAD Thin films Thin-SOI technology Tradeoffs Transistors Voltage
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