Unintentional High-Density p‑Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acce...

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Veröffentlicht in:	Nano letters 2014-05, Vol.14 (5), p.2807-2814
Hauptverfasser:	Jadczak, J, Plochocka, P, Mitioglu, A, Breslavetz, I, Royo, M, Bertoni, A, Goldoni, G, Smolenski, T, Kossacki, P, Kretinin, A, Shtrikman, Hadas, Maude, D. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceptors (electronic) Carbon Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Doping Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanowires Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Phonons Physics Quantum confinement Quantum wells Quantum wires Superconductivity
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