Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those...

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Veröffentlicht in:Physical review letters 2004-12, Vol.93 (23), p.237005.1-237005.4, Article 237005
Hauptverfasser: BUSTARRET, E, KACMARCIK, J, MARCENAT, C, GHEERAERT, E, CYTERMANN, C, MARCUS, J, KLEIN, T
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container_end_page 237005.4
container_issue 23
container_start_page 237005.1
container_title Physical review letters
container_volume 93
creator BUSTARRET, E
KACMARCIK, J
MARCENAT, C
GHEERAERT, E
CYTERMANN, C
MARCUS, J
KLEIN, T
description Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.
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source American Physical Society Journals
subjects Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Effects of crystal defects, doping and substitution
Exact sciences and technology
Metals, alloys and compounds (a15, 001c15, laves phases, chevrel phases, borocarbides, etc.)
Physics
Superconducting materials (excluding high-tc compounds)
Superconductivity
Transition temperature variations
title Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films
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