Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films
Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those...
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Veröffentlicht in: | Physical review letters 2004-12, Vol.93 (23), p.237005.1-237005.4, Article 237005 |
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container_title | Physical review letters |
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creator | BUSTARRET, E KACMARCIK, J MARCENAT, C GHEERAERT, E CYTERMANN, C MARCUS, J KLEIN, T |
description | Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK. |
doi_str_mv | 10.1103/physrevlett.93.237005 |
format | Article |
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subjects | Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Effects of crystal defects, doping and substitution Exact sciences and technology Metals, alloys and compounds (a15, 001c15, laves phases, chevrel phases, borocarbides, etc.) Physics Superconducting materials (excluding high-tc compounds) Superconductivity Transition temperature variations |
title | Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films |
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