Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor
Optical quality Ge-doped SiO2 thin films, suitable for an integrated optic version of a gain equalizer for erbium-doped fibre amplifiers (EDFAs), have been deposited using a matrix distributed electron cyclotron resonance plasma-enhanced chemical vapour deposition (MDECR-PECVD) system. Using spectro...
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| Veröffentlicht in: | Optical materials 2007-10, Vol.30 (2), p.244-247 |
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| container_title | Optical materials |
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| creator | Botha, Roelene Bulkin, Pavel V. Swart, Pieter L. |
| description | Optical quality Ge-doped SiO2 thin films, suitable for an integrated optic version of a gain equalizer for erbium-doped fibre amplifiers (EDFAs), have been deposited using a matrix distributed electron cyclotron resonance plasma-enhanced chemical vapour deposition (MDECR-PECVD) system. Using spectroscopic ellipsometry and infrared transmission spectroscopy, the optical constants and hydroxyl content of the films were calculated. Losses due to the hydroxyl overtone at 1.37μm are found to be approximately 0.251dB/cm. An RBS analysis determined the germanium content of the films to be in the vicinity of 4 at.%. A comparison of the atomic percentage of germanium in the films and their corresponding refractive indices with values obtained using other deposition methods is also discussed. |
| doi_str_mv | 10.1016/j.optmat.2006.11.055 |
| format | Article |
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Using spectroscopic ellipsometry and infrared transmission spectroscopy, the optical constants and hydroxyl content of the films were calculated. Losses due to the hydroxyl overtone at 1.37μm are found to be approximately 0.251dB/cm. An RBS analysis determined the germanium content of the films to be in the vicinity of 4 at.%. 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Using spectroscopic ellipsometry and infrared transmission spectroscopy, the optical constants and hydroxyl content of the films were calculated. Losses due to the hydroxyl overtone at 1.37μm are found to be approximately 0.251dB/cm. An RBS analysis determined the germanium content of the films to be in the vicinity of 4 at.%. A comparison of the atomic percentage of germanium in the films and their corresponding refractive indices with values obtained using other deposition methods is also discussed.</description><subject>Applied sciences</subject><subject>Chemical vapour deposition</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Laser optical systems: design and operation</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical constants</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Physics</subject><subject>Plasma-enhanced</subject><subject>Resonators, cavities, amplifiers, arrays, and rings</subject><issn>0925-3467</issn><issn>1873-1252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kctu1DAUhi0EUofCG3ThDQsWCT7xJfEGqZqWFmmkdgFsLY8vrUeZOLLdir5GnxinQbDr6thH339uP0JnQFogIL4c2jiXoy5tR4hoAVrC-Ru0gaGnDXS8e4s2RHa8oUz0J-h9zgdCSMeF2KDnCzfHHEqIE44eX7nGxtlZnMMYjMblPkzYh_GYsY8J6wmHqbi7pEtlatNgsJ7nBX2p8JDDdIc1rrOk8BvbkGvcPyywG50pqTLmyYzx5ZVcjpOejMO3l9tfF_WvTYnpA3rn9Zjdx7_xFP38dvlje93sbq6-b893jaEgS2MGKvfScs4cF2B7K1jdyclBAjBjqfcDBwFMMOHJQGtGc7fv9szonsMg6Cn6vNa916OaUzjq9KSiDur6fKeWHCESKBf9I1SWraxJMefk_D8BELV4oA5q9UAtHigAVT2osk-rbNbZ6NGnum3I_7WSSNbTvnJfV87VfR-DSyqb4OplbEj1bMrG8HqjPy5foK8</recordid><startdate>20071001</startdate><enddate>20071001</enddate><creator>Botha, Roelene</creator><creator>Bulkin, Pavel V.</creator><creator>Swart, Pieter L.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-5591-3470</orcidid></search><sort><creationdate>20071001</creationdate><title>Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor</title><author>Botha, Roelene ; Bulkin, Pavel V. ; Swart, Pieter L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-c839b9d554e561d7d64025e989114cd3ff851614646f083cd3a5eb2b4ca751863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Chemical vapour deposition</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Laser optical systems: design and operation</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical constants</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Physics</topic><topic>Plasma-enhanced</topic><topic>Resonators, cavities, amplifiers, arrays, and rings</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Botha, Roelene</creatorcontrib><creatorcontrib>Bulkin, Pavel V.</creatorcontrib><creatorcontrib>Swart, Pieter L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Botha, Roelene</au><au>Bulkin, Pavel V.</au><au>Swart, Pieter L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor</atitle><jtitle>Optical materials</jtitle><date>2007-10-01</date><risdate>2007</risdate><volume>30</volume><issue>2</issue><spage>244</spage><epage>247</epage><pages>244-247</pages><issn>0925-3467</issn><eissn>1873-1252</eissn><abstract>Optical quality Ge-doped SiO2 thin films, suitable for an integrated optic version of a gain equalizer for erbium-doped fibre amplifiers (EDFAs), have been deposited using a matrix distributed electron cyclotron resonance plasma-enhanced chemical vapour deposition (MDECR-PECVD) system. Using spectroscopic ellipsometry and infrared transmission spectroscopy, the optical constants and hydroxyl content of the films were calculated. Losses due to the hydroxyl overtone at 1.37μm are found to be approximately 0.251dB/cm. An RBS analysis determined the germanium content of the films to be in the vicinity of 4 at.%. A comparison of the atomic percentage of germanium in the films and their corresponding refractive indices with values obtained using other deposition methods is also discussed.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.optmat.2006.11.055</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5591-3470</orcidid></addata></record> |
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| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | Applied sciences Chemical vapour deposition Circuit properties Electric, optical and optoelectronic circuits Electronics Engineering Sciences Exact sciences and technology Fundamental areas of phenomenology (including applications) Integrated optics. Optical fibers and wave guides Laser optical systems: design and operation Optical and optoelectronic circuits Optical constants Optical materials Optics Physics Plasma-enhanced Resonators, cavities, amplifiers, arrays, and rings |
| title | Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor |
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