Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, U...
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| Veröffentlicht in: | Materials science forum 2012-01, Vol.711, p.228-232 |
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| creator | Cazarré, Alain Begou, T. Goullet, Antoine Cortés, Ignasi Brault, J. Morancho, Frederique Regreny, P. Besland, Marie Paule Isoird, K. Al Alam, Elias Cordier, Yvon |
| description | MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.711.228 |
| format | Article |
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| title | Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process |
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