Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and aberration-corrected scanning transmission electron microscopy (STEM) characterization on the same single NW. Using aberration-corrected annular bright field and high angle annular dark field STEM, we identify th...

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Veröffentlicht in:	Nano letters 2012-11, Vol.12 (11), p.5691-5696
Hauptverfasser:	den Hertog, M. I, González-Posada, F, Songmuang, R, Rouviere, J. L, Fournier, T, Fernandez, B, Monroy, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Aberration Aluminum nitride Annular Condensed Matter Gallium nitrides Insertion Materials Science Nanowires Photocurrent Photoelectric effect Physics Scanning transmission electron microscopy
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