Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors
GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and aberration-corrected scanning transmission electron microscopy (STEM) characterization on the same single NW. Using aberration-corrected annular bright field and high angle annular dark field STEM, we identify th...
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| Veröffentlicht in: | Nano letters 2012-11, Vol.12 (11), p.5691-5696 |
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| creator | den Hertog, M. I González-Posada, F Songmuang, R Rouviere, J. L Fournier, T Fernandez, B Monroy, E |
| description | GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and aberration-corrected scanning transmission electron microscopy (STEM) characterization on the same single NW. Using aberration-corrected annular bright field and high angle annular dark field STEM, we identify the NW growth axis to be the N-polar [000–1] direction. The electrical transport characteristics of the NWs are explained by the polarization-induced asymmetric potential profile and by the presence of an AlN/GaN shell around the GaN base of the wire. The AlN insertion blocks the electron flow through the GaN core, confining the current to the radial GaN outer shell, close to the NW sidewalls, which increases the sensitivity of the photocurrent to the environment and in particular to the presence of oxygen. The desorption of oxygen adatoms in vacuum leads to a reduction of the nonradiative surface trap density, increasing both dark current and photocurrent. |
| doi_str_mv | 10.1021/nl302890f |
| format | Article |
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I ; González-Posada, F ; Songmuang, R ; Rouviere, J. L ; Fournier, T ; Fernandez, B ; Monroy, E</creator><creatorcontrib>den Hertog, M. I ; González-Posada, F ; Songmuang, R ; Rouviere, J. L ; Fournier, T ; Fernandez, B ; Monroy, E</creatorcontrib><description>GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and aberration-corrected scanning transmission electron microscopy (STEM) characterization on the same single NW. Using aberration-corrected annular bright field and high angle annular dark field STEM, we identify the NW growth axis to be the N-polar [000–1] direction. The electrical transport characteristics of the NWs are explained by the polarization-induced asymmetric potential profile and by the presence of an AlN/GaN shell around the GaN base of the wire. The AlN insertion blocks the electron flow through the GaN core, confining the current to the radial GaN outer shell, close to the NW sidewalls, which increases the sensitivity of the photocurrent to the environment and in particular to the presence of oxygen. The desorption of oxygen adatoms in vacuum leads to a reduction of the nonradiative surface trap density, increasing both dark current and photocurrent.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl302890f</identifier><identifier>PMID: 23030278</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Aberration ; Aluminum nitride ; Annular ; Condensed Matter ; Gallium nitrides ; Insertion ; Materials Science ; Nanowires ; Photocurrent ; Photoelectric effect ; Physics ; Scanning transmission electron microscopy</subject><ispartof>Nano letters, 2012-11, Vol.12 (11), p.5691-5696</ispartof><rights>Copyright © 2012 American Chemical Society</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a382t-6536e76d0d21156e167db3c03bd39f9ca11ec88454f374cafccd7aa2305069213</citedby><cites>FETCH-LOGICAL-a382t-6536e76d0d21156e167db3c03bd39f9ca11ec88454f374cafccd7aa2305069213</cites><orcidid>0000-0003-3721-3029 ; 0000-0003-0781-9249 ; 0000-0002-5601-487X ; 0000-0001-5481-3267 ; 0000-0001-8731-3074</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl302890f$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl302890f$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>230,314,776,780,881,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23030278$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00863667$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>den Hertog, M. 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The electrical transport characteristics of the NWs are explained by the polarization-induced asymmetric potential profile and by the presence of an AlN/GaN shell around the GaN base of the wire. The AlN insertion blocks the electron flow through the GaN core, confining the current to the radial GaN outer shell, close to the NW sidewalls, which increases the sensitivity of the photocurrent to the environment and in particular to the presence of oxygen. The desorption of oxygen adatoms in vacuum leads to a reduction of the nonradiative surface trap density, increasing both dark current and photocurrent.</description><subject>Aberration</subject><subject>Aluminum nitride</subject><subject>Annular</subject><subject>Condensed Matter</subject><subject>Gallium nitrides</subject><subject>Insertion</subject><subject>Materials Science</subject><subject>Nanowires</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Physics</subject><subject>Scanning transmission electron microscopy</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkcFuEzEQhi1ERUvhwAsgX5DKIc14vWuvj1EELVKUVmo5WxOvV3Xl2IvtpUqfng0p4YLEaUajz59m_BPygcElg4rNg-dQtQr6V-SMNRxmQqnq9bFv61PyNudHAFC8gTfktOIwvZDtGXlexpSsx-JioLGnt9FjcmVHMXR0mXa5oKd3JY2mjMnSJ1ce6M1QovXWlBSDM7_J-4QhDzEVepviYFNxNu91V7ieL_x6PlW6xhCf3CS5syHHlN-Rkx59tu9f6jn5_vXL_fJ6trq5-rZcrGbI26rMRMOFlaKDrmKsEZYJ2W24Ab7puOqVQcasadu6qXsua4O9MZ1EnE5sQKiK8XPy-eB9QK-H5LaYdjqi09eLld7PAFrBhZA_9-zFgR1S_DHaXPTWZWO9x2DjmDWTooJaSaX-jzLJ2kYBiL8bmBRzTrY_rsFA7xPUxwQn9uOLdtxsbXck_0Q2AZ8OAJqsH-OYwvR5_xD9AtVVoZI</recordid><startdate>20121114</startdate><enddate>20121114</enddate><creator>den Hertog, M. 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The electrical transport characteristics of the NWs are explained by the polarization-induced asymmetric potential profile and by the presence of an AlN/GaN shell around the GaN base of the wire. The AlN insertion blocks the electron flow through the GaN core, confining the current to the radial GaN outer shell, close to the NW sidewalls, which increases the sensitivity of the photocurrent to the environment and in particular to the presence of oxygen. 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| source | ACS Publications |
| subjects | Aberration Aluminum nitride Annular Condensed Matter Gallium nitrides Insertion Materials Science Nanowires Photocurrent Photoelectric effect Physics Scanning transmission electron microscopy |
| title | Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors |
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