Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor...

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Veröffentlicht in:	Nanotechnology 2012-10, Vol.23 (40)
Hauptverfasser:	Lekhal, Kaddour, Avit, G., André, Y., Trassoudaine, Agnès, Gil, E., Varenne, Christelle, Bougerol, Catherine, Monier, Guillaume, Castelluci, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Materials Science Physics
Online-Zugang:	Volltext
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