Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode

Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into accou...

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Veröffentlicht in:	Journal of applied physics 2012-12, Vol.112 (11)
Hauptverfasser:	Boucherit, M., Soltani, A., Rousseau, M., Farvacque, J.-L., DeJaeger, J.-C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Electron density Electronics Engineering Sciences Evolution Formalism Gallium nitrides Heterostructures Mathematical analysis Resonant tunneling
Online-Zugang:	Volltext
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