Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements
We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. Th...
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| Veröffentlicht in: | Journal of non-crystalline solids 2012-09, Vol.358 (17), p.2236-2240 |
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| container_title | Journal of non-crystalline solids |
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| creator | Varache, R. Favre, W. Korte, L. Kleider, J.P. |
| description | We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. The model assumes an exponential band tail for the defect distribution in a-Si:H. The effects of the different parameters involved in the calculation are investigated in detail, such as the Fermi level position in a-Si:H, the density of states and the band offsets. The calculation was used to interpret temperature dependent planar conductance measurements carried out on (n) a-Si:H/ (p) c-Si and (p) a-Si:H/(n) c-Si structures, which allowed us to confirm a previous evaluation of the conduction band offset, ∆EC=0.18±0.05eV, and to evaluate the valence band offset: ∆EV=0.36±0.05eV at the a-Si:H/ c-Si heterojunction. The results are placed in the frame of recent publications.
► We calculate the band-bending in the crystalline part of a silicon heterojunction. ► The dependence of the bend-bending on structure parameters is studied. ► The band-bending is mainly influenced by the band offsets and density of states. ► We measured planar conductance on amorphous/crystalline silicon heterojunctions. ► We deduce the conduction and valence band offsets: 0.18eV and 0.35eV respectively. |
| doi_str_mv | 10.1016/j.jnoncrysol.2011.11.023 |
| format | Article |
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► We calculate the band-bending in the crystalline part of a silicon heterojunction. ► The dependence of the bend-bending on structure parameters is studied. ► The band-bending is mainly influenced by the band offsets and density of states. ► We measured planar conductance on amorphous/crystalline silicon heterojunctions. ► We deduce the conduction and valence band offsets: 0.18eV and 0.35eV respectively.</description><identifier>ISSN: 0022-3093</identifier><identifier>EISSN: 1873-4812</identifier><identifier>DOI: 10.1016/j.jnoncrysol.2011.11.023</identifier><identifier>CODEN: JNCSBJ</identifier><language>eng</language><publisher>Oxford: Elsevier B.V</publisher><subject>a-Si:H ; Applied sciences ; Band offset ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Density of states ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Energy ; Exact sciences and technology ; Materials ; Natural energy ; Photovoltaic ; Photovoltaic conversion ; Physics ; Silicon heterojunction ; Solar cells. Photoelectrochemical cells ; Solar energy ; Thin films and multilayers</subject><ispartof>Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2236-2240</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c382t-ec03857509a96f5f7e820d402c8079429a369910cf96a8ac9b554dd13c2aaf143</citedby><cites>FETCH-LOGICAL-c382t-ec03857509a96f5f7e820d402c8079429a369910cf96a8ac9b554dd13c2aaf143</cites><orcidid>0000-0003-4388-6326</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jnoncrysol.2011.11.023$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,309,310,314,780,784,789,790,885,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26577246$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://centralesupelec.hal.science/hal-00778951$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Varache, R.</creatorcontrib><creatorcontrib>Favre, W.</creatorcontrib><creatorcontrib>Korte, L.</creatorcontrib><creatorcontrib>Kleider, J.P.</creatorcontrib><title>Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements</title><title>Journal of non-crystalline solids</title><description>We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. The model assumes an exponential band tail for the defect distribution in a-Si:H. The effects of the different parameters involved in the calculation are investigated in detail, such as the Fermi level position in a-Si:H, the density of states and the band offsets. The calculation was used to interpret temperature dependent planar conductance measurements carried out on (n) a-Si:H/ (p) c-Si and (p) a-Si:H/(n) c-Si structures, which allowed us to confirm a previous evaluation of the conduction band offset, ∆EC=0.18±0.05eV, and to evaluate the valence band offset: ∆EV=0.36±0.05eV at the a-Si:H/ c-Si heterojunction. The results are placed in the frame of recent publications.
► We calculate the band-bending in the crystalline part of a silicon heterojunction. ► The dependence of the bend-bending on structure parameters is studied. ► The band-bending is mainly influenced by the band offsets and density of states. ► We measured planar conductance on amorphous/crystalline silicon heterojunctions. ► We deduce the conduction and valence band offsets: 0.18eV and 0.35eV respectively.</description><subject>a-Si:H</subject><subject>Applied sciences</subject><subject>Band offset</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Density of states</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Materials</subject><subject>Natural energy</subject><subject>Photovoltaic</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Silicon heterojunction</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Thin films and multilayers</subject><issn>0022-3093</issn><issn>1873-4812</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLJDEUhYMo2Dr-h2xczKLaPOqRLFV8QYMbZx2uqRs6TbpSJGnBf2-KHnRpuBDI_c4J5xBCOVtzxvub3Xo3xcmmzxzDWjDO13WYkCdkxdUgm1ZxcUpWjAnRSKblObnIecfqGaRakfAyuXDAySKNjpYtUtjHNG_jId8spgVC8BPS7IO3caJbLJhiLulgyyEhnVOcMRWPmdbtHGCCRCs41j0srnuEXME9TiX_IWcOQsar__cl-ff48Hb_3Gxen17ubzeNlUqUBi2Tqhs6pkH3rnMDKsHGlgmr2KBboUH2WnNmne5BgdXvXdeOI5dWADjeykvy9-i7hWDm5PeQPk0Eb55vN2Z5q-EHpTv-wSurjqytsXJC9y3gzCwNm535adgsDZs6teEqvT5KZ8gWgks1sM_fetF3wyDavnJ3Rw5r5g-PyWTrl8pHn9AWM0b_-2df0uOZow</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Varache, R.</creator><creator>Favre, W.</creator><creator>Korte, L.</creator><creator>Kleider, J.P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4388-6326</orcidid></search><sort><creationdate>20120901</creationdate><title>Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements</title><author>Varache, R. ; Favre, W. ; Korte, L. ; Kleider, J.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-ec03857509a96f5f7e820d402c8079429a369910cf96a8ac9b554dd13c2aaf143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>a-Si:H</topic><topic>Applied sciences</topic><topic>Band offset</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Density of states</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Materials</topic><topic>Natural energy</topic><topic>Photovoltaic</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Silicon heterojunction</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Thin films and multilayers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Varache, R.</creatorcontrib><creatorcontrib>Favre, W.</creatorcontrib><creatorcontrib>Korte, L.</creatorcontrib><creatorcontrib>Kleider, J.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Varache, R.</au><au>Favre, W.</au><au>Korte, L.</au><au>Kleider, J.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>358</volume><issue>17</issue><spage>2236</spage><epage>2240</epage><pages>2236-2240</pages><issn>0022-3093</issn><eissn>1873-4812</eissn><coden>JNCSBJ</coden><abstract>We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. The model assumes an exponential band tail for the defect distribution in a-Si:H. The effects of the different parameters involved in the calculation are investigated in detail, such as the Fermi level position in a-Si:H, the density of states and the band offsets. The calculation was used to interpret temperature dependent planar conductance measurements carried out on (n) a-Si:H/ (p) c-Si and (p) a-Si:H/(n) c-Si structures, which allowed us to confirm a previous evaluation of the conduction band offset, ∆EC=0.18±0.05eV, and to evaluate the valence band offset: ∆EV=0.36±0.05eV at the a-Si:H/ c-Si heterojunction. The results are placed in the frame of recent publications.
► We calculate the band-bending in the crystalline part of a silicon heterojunction. ► The dependence of the bend-bending on structure parameters is studied. ► The band-bending is mainly influenced by the band offsets and density of states. ► We measured planar conductance on amorphous/crystalline silicon heterojunctions. ► We deduce the conduction and valence band offsets: 0.18eV and 0.35eV respectively.</abstract><cop>Oxford</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jnoncrysol.2011.11.023</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-4388-6326</orcidid></addata></record> |
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| subjects | a-Si:H Applied sciences Band offset Condensed matter: electronic structure, electrical, magnetic, and optical properties Density of states Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Energy Exact sciences and technology Materials Natural energy Photovoltaic Photovoltaic conversion Physics Silicon heterojunction Solar cells. Photoelectrochemical cells Solar energy Thin films and multilayers |
| title | Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements |
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