Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric depend...

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Veröffentlicht in:	Journal of applied physics 2013-01, Vol.113 (2), p.023704-7
Hauptverfasser:	Luckas, J., Piarristeguy, A., Bruns, G., Jost, P., Grothe, S., Schmidt, R. M., Longeaud, C., Wuttig, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation energy Alloys Amorphous materials Condensed Matter Correlation Density Drift Electrical resistivity Electronics Materials Science Physics
Online-Zugang:	Volltext
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