Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys
In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric depend...
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Veröffentlicht in: | Journal of applied physics 2013-01, Vol.113 (2), p.023704-7 |
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creator | Luckas, J. Piarristeguy, A. Bruns, G. Jost, P. Grothe, S. Schmidt, R. M. Longeaud, C. Wuttig, M. |
description | In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (αRD = 0.129) to a-Ge2Sn2Te4 (αRD = 0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter αRD correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization. |
doi_str_mv | 10.1063/1.4769871 |
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fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00775944v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1323229354</sourcerecordid><originalsourceid>FETCH-LOGICAL-c362t-dbb2302eb78f290c2f25a2790646125664443bac240b8288dffdfcca0c4aaee83</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMoWKsH_8Ee9bA1X7tJjqVoKxQ8tF4N2ezEXdkma7IV-u_d0qKnYeZ9eGBehO4JnhFcsicy46JUUpALNCFYqlwUBb5EE4wpyaUS6hrdpPSFMSGSqQn62AyhtU0bdjDEQ1ZDD74GbyELLouQ2jSY41bH1g1Z34AfSW-y1mdmF2LfhH3KlrDxWxhTkyC3jfGfkJmuC4d0i66c6RLcnecUvb88bxerfP22fF3M17llJR3yuqoowxQqIR1V2FJHC0OFwiUvCS3KknPOKmMpx5WkUtbO1c5agy03BkCyKXo8eRvT6T62OxMPOphWr-ZrfbxhLEShOP8hI_twYvsYvveQBr1rk4WuMx7GbzRhlFGqWMH_tTaGlCK4PzfB-ti3JvrcN_sFUb5ycA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323229354</pqid></control><display><type>article</type><title>Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys</title><source>American Institute of Physics (AIP) Journals</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Luckas, J. ; Piarristeguy, A. ; Bruns, G. ; Jost, P. ; Grothe, S. ; Schmidt, R. M. ; Longeaud, C. ; Wuttig, M.</creator><creatorcontrib>Luckas, J. ; Piarristeguy, A. ; Bruns, G. ; Jost, P. ; Grothe, S. ; Schmidt, R. M. ; Longeaud, C. ; Wuttig, M.</creatorcontrib><description>In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (αRD = 0.129) to a-Ge2Sn2Te4 (αRD = 0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter αRD correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4769871</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Activation energy ; Alloys ; Amorphous materials ; Condensed Matter ; Correlation ; Density ; Drift ; Electrical resistivity ; Electronics ; Materials Science ; Physics</subject><ispartof>Journal of applied physics, 2013-01, Vol.113 (2), p.023704-7</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-dbb2302eb78f290c2f25a2790646125664443bac240b8288dffdfcca0c4aaee83</citedby><cites>FETCH-LOGICAL-c362t-dbb2302eb78f290c2f25a2790646125664443bac240b8288dffdfcca0c4aaee83</cites><orcidid>0000-0002-7175-3267</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00775944$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Luckas, J.</creatorcontrib><creatorcontrib>Piarristeguy, A.</creatorcontrib><creatorcontrib>Bruns, G.</creatorcontrib><creatorcontrib>Jost, P.</creatorcontrib><creatorcontrib>Grothe, S.</creatorcontrib><creatorcontrib>Schmidt, R. M.</creatorcontrib><creatorcontrib>Longeaud, C.</creatorcontrib><creatorcontrib>Wuttig, M.</creatorcontrib><title>Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys</title><title>Journal of applied physics</title><description>In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (αRD = 0.129) to a-Ge2Sn2Te4 (αRD = 0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter αRD correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization.</description><subject>Activation energy</subject><subject>Alloys</subject><subject>Amorphous materials</subject><subject>Condensed Matter</subject><subject>Correlation</subject><subject>Density</subject><subject>Drift</subject><subject>Electrical resistivity</subject><subject>Electronics</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKsH_8Ee9bA1X7tJjqVoKxQ8tF4N2ezEXdkma7IV-u_d0qKnYeZ9eGBehO4JnhFcsicy46JUUpALNCFYqlwUBb5EE4wpyaUS6hrdpPSFMSGSqQn62AyhtU0bdjDEQ1ZDD74GbyELLouQ2jSY41bH1g1Z34AfSW-y1mdmF2LfhH3KlrDxWxhTkyC3jfGfkJmuC4d0i66c6RLcnecUvb88bxerfP22fF3M17llJR3yuqoowxQqIR1V2FJHC0OFwiUvCS3KknPOKmMpx5WkUtbO1c5agy03BkCyKXo8eRvT6T62OxMPOphWr-ZrfbxhLEShOP8hI_twYvsYvveQBr1rk4WuMx7GbzRhlFGqWMH_tTaGlCK4PzfB-ti3JvrcN_sFUb5ycA</recordid><startdate>20130114</startdate><enddate>20130114</enddate><creator>Luckas, J.</creator><creator>Piarristeguy, A.</creator><creator>Bruns, G.</creator><creator>Jost, P.</creator><creator>Grothe, S.</creator><creator>Schmidt, R. M.</creator><creator>Longeaud, C.</creator><creator>Wuttig, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-7175-3267</orcidid></search><sort><creationdate>20130114</creationdate><title>Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys</title><author>Luckas, J. ; Piarristeguy, A. ; Bruns, G. ; Jost, P. ; Grothe, S. ; Schmidt, R. M. ; Longeaud, C. ; Wuttig, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-dbb2302eb78f290c2f25a2790646125664443bac240b8288dffdfcca0c4aaee83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Activation energy</topic><topic>Alloys</topic><topic>Amorphous materials</topic><topic>Condensed Matter</topic><topic>Correlation</topic><topic>Density</topic><topic>Drift</topic><topic>Electrical resistivity</topic><topic>Electronics</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luckas, J.</creatorcontrib><creatorcontrib>Piarristeguy, A.</creatorcontrib><creatorcontrib>Bruns, G.</creatorcontrib><creatorcontrib>Jost, P.</creatorcontrib><creatorcontrib>Grothe, S.</creatorcontrib><creatorcontrib>Schmidt, R. M.</creatorcontrib><creatorcontrib>Longeaud, C.</creatorcontrib><creatorcontrib>Wuttig, M.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luckas, J.</au><au>Piarristeguy, A.</au><au>Bruns, G.</au><au>Jost, P.</au><au>Grothe, S.</au><au>Schmidt, R. M.</au><au>Longeaud, C.</au><au>Wuttig, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys</atitle><jtitle>Journal of applied physics</jtitle><date>2013-01-14</date><risdate>2013</risdate><volume>113</volume><issue>2</issue><spage>023704</spage><epage>7</epage><pages>023704-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In phase-change materials, the amorphous state resistivity increases with time following a power law ρ ∝ (t/t0)αRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (αRD = 0.129) to a-Ge2Sn2Te4 (αRD = 0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter αRD correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4769871</doi><tpages>-23696</tpages><orcidid>https://orcid.org/0000-0002-7175-3267</orcidid></addata></record> |
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subjects | Activation energy Alloys Amorphous materials Condensed Matter Correlation Density Drift Electrical resistivity Electronics Materials Science Physics |
title | Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys |
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