n-type phosphorus-doped polycrystalline diamond on silicon substrates

The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH 3) to the gas mixture during growth. The lo...

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Veröffentlicht in:	Diamond and related materials 2008-07, Vol.17 (7), p.1324-1329
Hauptverfasser:	Ghodbane, S., Omnès, F., Bustarret, E., Tavares, C., Jomard, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Cross-disciplinary physics: materials science rheology Engineering Sciences Exact sciences and technology Fullerenes and related materials diamonds, graphite Ion and electron beam-assisted deposition ion plating Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy MPCVD polycrystalline diamond n-type doping Phosphorus incorporation Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma-based ion implantation and deposition Specific materials Theory and models of film growth
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