n-type phosphorus-doped polycrystalline diamond on silicon substrates
The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH 3) to the gas mixture during growth. The lo...
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| Veröffentlicht in: | Diamond and related materials 2008-07, Vol.17 (7), p.1324-1329 |
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| container_title | Diamond and related materials |
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| creator | Ghodbane, S. Omnès, F. Bustarret, E. Tavares, C. Jomard, F. |
| description | The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH
3) to the gas mixture during growth. The low CH
4/H
2 ratio (0.15%) and the use of the same growth parameters as for homoepitaxial {111} films, led to a good crystalline quality of the continuous polycrystalline diamond layers, confirmed by SEM images and Raman spectroscopy measurements.
Secondary-ion mass spectrometry (SIMS) analysis measured a phosphorus concentration [P] of at least 7
×
10
17 cm
−
3
. Cathodoluminescence spectroscopy in our P-doped polycrystalline films shows a phosphorus bound exciton (BE
TO
P) peak between 5.142 and 5.181 eV. Cathodoluminescence and Raman-effect spectroscopy confirmed the improvement of the crystalline quality of our films as well as a decrease in the intensity of the internal strain when the grain size was decreased. Cathodoluminescence imaging and SIMS depth profile of phosphorus demonstrated a very good homogeneity of phosphorus incorporation in the films. |
| doi_str_mv | 10.1016/j.diamond.2008.01.090 |
| format | Article |
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3) to the gas mixture during growth. The low CH
4/H
2 ratio (0.15%) and the use of the same growth parameters as for homoepitaxial {111} films, led to a good crystalline quality of the continuous polycrystalline diamond layers, confirmed by SEM images and Raman spectroscopy measurements.
Secondary-ion mass spectrometry (SIMS) analysis measured a phosphorus concentration [P] of at least 7
×
10
17 cm
−
3
. Cathodoluminescence spectroscopy in our P-doped polycrystalline films shows a phosphorus bound exciton (BE
TO
P) peak between 5.142 and 5.181 eV. Cathodoluminescence and Raman-effect spectroscopy confirmed the improvement of the crystalline quality of our films as well as a decrease in the intensity of the internal strain when the grain size was decreased. Cathodoluminescence imaging and SIMS depth profile of phosphorus demonstrated a very good homogeneity of phosphorus incorporation in the films.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2008.01.090</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed Matter ; Cross-disciplinary physics: materials science; rheology ; Engineering Sciences ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Ion and electron beam-assisted deposition; ion plating ; Materials ; Materials Science ; Methods of deposition of films and coatings; film growth and epitaxy ; MPCVD polycrystalline diamond ; n-type doping ; Phosphorus incorporation ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Plasma-based ion implantation and deposition ; Specific materials ; Theory and models of film growth</subject><ispartof>Diamond and related materials, 2008-07, Vol.17 (7), p.1324-1329</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-7c0e6294f82218a5222d288c280e220b294b5d6ed1120bbc492cffa7a55d49443</citedby><cites>FETCH-LOGICAL-c404t-7c0e6294f82218a5222d288c280e220b294b5d6ed1120bbc492cffa7a55d49443</cites><orcidid>0009-0006-2719-6455</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963508001490$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,881,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20664057$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00761492$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Ghodbane, S.</creatorcontrib><creatorcontrib>Omnès, F.</creatorcontrib><creatorcontrib>Bustarret, E.</creatorcontrib><creatorcontrib>Tavares, C.</creatorcontrib><creatorcontrib>Jomard, F.</creatorcontrib><title>n-type phosphorus-doped polycrystalline diamond on silicon substrates</title><title>Diamond and related materials</title><description>The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH
3) to the gas mixture during growth. The low CH
4/H
2 ratio (0.15%) and the use of the same growth parameters as for homoepitaxial {111} films, led to a good crystalline quality of the continuous polycrystalline diamond layers, confirmed by SEM images and Raman spectroscopy measurements.
Secondary-ion mass spectrometry (SIMS) analysis measured a phosphorus concentration [P] of at least 7
×
10
17 cm
−
3
. Cathodoluminescence spectroscopy in our P-doped polycrystalline films shows a phosphorus bound exciton (BE
TO
P) peak between 5.142 and 5.181 eV. Cathodoluminescence and Raman-effect spectroscopy confirmed the improvement of the crystalline quality of our films as well as a decrease in the intensity of the internal strain when the grain size was decreased. Cathodoluminescence imaging and SIMS depth profile of phosphorus demonstrated a very good homogeneity of phosphorus incorporation in the films.</description><subject>Condensed Matter</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Ion and electron beam-assisted deposition; ion plating</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MPCVD polycrystalline diamond</subject><subject>n-type doping</subject><subject>Phosphorus incorporation</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Plasma-based ion implantation and deposition</subject><subject>Specific materials</subject><subject>Theory and models of film growth</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEUhYMoWB8_QZiNgosZb9LMayUiaoWCG12HNLlDU9LJmDsV-u_N0OLWRbjk5pzzkcPYDYeCA68eNoV1eht6WwiApgBeQAsnbMabus0BKnHKZtCKMm-reXnOLog2AFy0ks_YS5-P-wGzYR0onbij3IYBbTYEvzdxT6P23vWYHRFZ6DNy3plp7lY0Rj0iXbGzTnvC6-O8ZF-vL5_Pi3z58fb-_LTMjQQ55rUBrBK3a4TgjS6FEFY0jRENoBCwSk-r0lZoOU-3lZGtMF2na12WVrZSzi_Z_SF3rb0aotvquFdBO7V4WqppB1BXPNl-eNLeHbRDDN87pFFtHRn0XvcYdqTmcl4ncJ2E5UFoYiCK2P0lc1BTwWqjjr9XU8EKuEoFJ9_tEaDJaN9F3RtHf2YBVSWhnPIfDzpMzfw4jIqMw96gdRHNqGxw_5B-AcR6kyU</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>Ghodbane, S.</creator><creator>Omnès, F.</creator><creator>Bustarret, E.</creator><creator>Tavares, C.</creator><creator>Jomard, F.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0009-0006-2719-6455</orcidid></search><sort><creationdate>20080701</creationdate><title>n-type phosphorus-doped polycrystalline diamond on silicon substrates</title><author>Ghodbane, S. ; Omnès, F. ; Bustarret, E. ; Tavares, C. ; Jomard, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-7c0e6294f82218a5222d288c280e220b294b5d6ed1120bbc492cffa7a55d49443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Condensed Matter</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Ion and electron beam-assisted deposition; ion plating</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>MPCVD polycrystalline diamond</topic><topic>n-type doping</topic><topic>Phosphorus incorporation</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Plasma applications</topic><topic>Plasma-based ion implantation and deposition</topic><topic>Specific materials</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ghodbane, S.</creatorcontrib><creatorcontrib>Omnès, F.</creatorcontrib><creatorcontrib>Bustarret, E.</creatorcontrib><creatorcontrib>Tavares, C.</creatorcontrib><creatorcontrib>Jomard, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ghodbane, S.</au><au>Omnès, F.</au><au>Bustarret, E.</au><au>Tavares, C.</au><au>Jomard, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>n-type phosphorus-doped polycrystalline diamond on silicon substrates</atitle><jtitle>Diamond and related materials</jtitle><date>2008-07-01</date><risdate>2008</risdate><volume>17</volume><issue>7</issue><spage>1324</spage><epage>1329</epage><pages>1324-1329</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH
3) to the gas mixture during growth. The low CH
4/H
2 ratio (0.15%) and the use of the same growth parameters as for homoepitaxial {111} films, led to a good crystalline quality of the continuous polycrystalline diamond layers, confirmed by SEM images and Raman spectroscopy measurements.
Secondary-ion mass spectrometry (SIMS) analysis measured a phosphorus concentration [P] of at least 7
×
10
17 cm
−
3
. Cathodoluminescence spectroscopy in our P-doped polycrystalline films shows a phosphorus bound exciton (BE
TO
P) peak between 5.142 and 5.181 eV. Cathodoluminescence and Raman-effect spectroscopy confirmed the improvement of the crystalline quality of our films as well as a decrease in the intensity of the internal strain when the grain size was decreased. Cathodoluminescence imaging and SIMS depth profile of phosphorus demonstrated a very good homogeneity of phosphorus incorporation in the films.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2008.01.090</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0006-2719-6455</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Condensed Matter Cross-disciplinary physics: materials science rheology Engineering Sciences Exact sciences and technology Fullerenes and related materials diamonds, graphite Ion and electron beam-assisted deposition ion plating Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy MPCVD polycrystalline diamond n-type doping Phosphorus incorporation Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma-based ion implantation and deposition Specific materials Theory and models of film growth |
| title | n-type phosphorus-doped polycrystalline diamond on silicon substrates |
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