Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD

Sets of heavily boron-doped {100}-oriented diamond epilayers have been grown by MPCVD from isotope-enriched gases such as 13CH 4 and 10B 2H 6 or 13CH 4 and naturally abundant 11B 2H 6, and the resulting concentration profiles of the various boron isotopes were measured by SIMS. In the particular cas...

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Veröffentlicht in:	Diamond and related materials 2010-07, Vol.19 (7), p.814-817
Hauptverfasser:	Achatz, P., Omnès, F., Ortéga, L., Marcenat, C., Vacík, J., Hnatowicz, V., Köster, U., Jomard, F., Bustarret, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption cross sections Boron isotopes Carbon Composition and phase identification Condensed Matter Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Diamond epilayers Exact sciences and technology Fullerenes and related materials diamonds, graphite Isotopes Isotopic effects Materials science Neutron depth profiling Origins p-type doping Physics Secondary ion mass spectrometry Specific materials Superconductivity Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vibrational properties
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