Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance–voltage measurements

Boron incorporation from the gas phase was achieved in MPCVD grown (100)-oriented homoepitaxial diamond layers, either with or without a small fraction of oxygen in the gas phase, in addition to hydrogen, methane and diborane. From secondary Ion Mass Spectroscopy (SIMS), it is shown that the 0.25% o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Diamond and related materials 2011-07, Vol.20 (7), p.912-916
Hauptverfasser:	Omnès, Franck, Muret, Pierre, Volpe, Pierre-Nicolas, Wade, Mamadou, Pernot, Julien, Jomard, François
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Boron dosimetry Cathodoluminescence Cathodoluminescence, ionoluminescence Compensation Composition and phase identification Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diamond growth Engineering Sciences Exact sciences and technology Excitation spectra Fullerenes and related materials diamonds, graphite Gas phases Materials Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Physics Secondary ion mass spectrometry Secondary ion mass spectroscopy Specific materials Spectroscopy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!