Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity co...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 81 |
| creator | Marcenat, C. Kačmarčík, J. Piquerel, R. Achatz, P. Prudon, G. Dubois, C. Gautier, B. Dupuy, J. C. Bustarret, E. Ortega, L. Klein, T. Boulmer, J. Kociniewski, T. Débarre, D. |
| description | We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity could be observed down to 40 mK for doping level below similar to 2 at. %. The critical temperature T(c) then increased steeply to reach similar to 0.6 K for c(B) similar to 8 at. %. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field mu(o)H(c2) (0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. [E. Bustarret et al., Nature (London) 444, 465 (2006)]. |
| doi_str_mv | 10.1103/PhysRevB.81.020501 |
| format | Article |
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| subjects | Condensed Matter Physics Superconductivity |
| title | Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers |
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