Seed Surface Preparation for SiC Sublimation Growth

The seed surface preparation for SiC sublimation growth has been investigated. Two methods have been developed to prepare and improve the seed surface contribution during the growth initiation: An in-situ sublimation etching of the seed is performed, and, the seed surface is prepared by ex-situ poli...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2000-01, Vol.338-342, p.47-50
Hauptverfasser:	Grosse, Philippe, Moulin, Cécile, Pernot, Etienne, Couchaud, M., Basset, Gérard, Madar, Roland, Ferrand, Bernard, Anikin, Mikhail, Pelissier, Bernard, Faure, Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!