Seed Surface Preparation for SiC Sublimation Growth

Seed Surface Preparation for SiC Sublimation Growth

The seed surface preparation for SiC sublimation growth has been investigated. Two methods have been developed to prepare and improve the seed surface contribution during the growth initiation: An in-situ sublimation etching of the seed is performed, and, the seed surface is prepared by ex-situ poli...

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Veröffentlicht in:Materials science forum 2000-01, Vol.338-342, p.47-50
Hauptverfasser: Grosse, Philippe, Moulin, Cécile, Pernot, Etienne, Couchaud, M., Basset, Gérard, Madar, Roland, Ferrand, Bernard, Anikin, Mikhail, Pelissier, Bernard, Faure, Christian
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container_issue
container_start_page 47
container_title Materials science forum
container_volume 338-342
creator Grosse, Philippe
Moulin, Cécile
Pernot, Etienne
Couchaud, M.
Basset, Gérard
Madar, Roland
Ferrand, Bernard
Anikin, Mikhail
Pelissier, Bernard
Faure, Christian
description The seed surface preparation for SiC sublimation growth has been investigated. Two methods have been developed to prepare and improve the seed surface contribution during the growth initiation: An in-situ sublimation etching of the seed is performed, and, the seed surface is prepared by ex-situ polishing and chemical and ozone cleaning. Both methods promote a better lateral growth mechanism, and then promote the prefered step flow growth mechanism. This results in a better crystalline quality of the crystals in terms of mosai:city, polytype stability and micropipe density.
doi_str_mv 10.4028/www.scientific.net/MSF.338-342.47
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title Seed Surface Preparation for SiC Sublimation Growth
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