Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses

We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000h. Stress conditions consist in applying collector–em...

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Veröffentlicht in:	Microelectronics and reliability 2011-09, Vol.51 (9-11), p.1730-1735
Hauptverfasser:	Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Riet, M., Godin, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Beta Collectors Design. Technologies. Operation analysis. Testing Electrical junctions Electronics Engineering Sciences Exact sciences and technology Gain High speed Indium gallium arsenides Indium phosphides Integrated circuits Micro and nanotechnologies Microelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stresses Transistors
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