Graded Etched Junction Termination for SiC Thyristors

Graded Etched Junction Termination for SiC Thyristors

In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample...

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Veröffentlicht in:Materials science forum 2011-03, Vol.679-680, p.457-460
Hauptverfasser: Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique
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Engineering Sciences
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creator Scharnholz, Sigo
De Doncker, Rik W.
Pâques, Gontran
Dheilly, Nicolas
Planson, Dominique
description In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².
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Engineering Sciences
title Graded Etched Junction Termination for SiC Thyristors
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