Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the materi...

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Veröffentlicht in:	Materials science forum 2011-03, Vol.679-680, p.473-476
Hauptverfasser:	Konrath, Jens Peter, Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric power Engineering Sciences
Online-Zugang:	Volltext
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