Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the materi...

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Veröffentlicht in:Materials science forum 2011-03, Vol.679-680, p.473-476
Hauptverfasser: Konrath, Jens Peter, Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique
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Electric power
Engineering Sciences
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container_title Materials science forum
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creator Konrath, Jens Peter
Scharnholz, Sigo
De Doncker, Rik W.
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Dheilly, Nicolas
Planson, Dominique
description With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the material surface. It was shown that these simple devices are well suited as test devices.
doi_str_mv 10.4028/www.scientific.net/MSF.679-680.473
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Engineering Sciences
title Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height
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