Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies
Lanthanum titanium oxynitride (LaTiOxNy) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric propert...
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| Veröffentlicht in: | Thin solid films 2011-11, Vol.520 (2), p.778-783 |
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| container_title | Thin solid films |
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| creator | LU, Y ZIANI, A SHARAIHA, A LE PAVEN-THIVET, C BENZERGA, R LE GENDRE, L FASQUELLE, D KASSEM, H TESSIER, F VIGNERAS, V CARRU, J.-C |
| description | Lanthanum titanium oxynitride (LaTiOxNy) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxNy thin films deposited on conductive single crystal Nb-STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiOxNy polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiOxNy films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz). |
| doi_str_mv | 10.1016/j.tsf.2011.01.226 |
| format | Article |
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Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxNy thin films deposited on conductive single crystal Nb-STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiOxNy polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiOxNy films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.01.226</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Chemical Sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Dielectric thin films ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Material chemistry ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Thin solid films, 2011-11, Vol.520 (2), p.778-783</ispartof><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c309t-26d266ae63cea960347636b9bf7481bd9f7bd5019a65b46c8f3e42794da1492f3</citedby><cites>FETCH-LOGICAL-c309t-26d266ae63cea960347636b9bf7481bd9f7bd5019a65b46c8f3e42794da1492f3</cites><orcidid>0000-0002-5755-0041 ; 0000-0002-1947-1860 ; 0000-0003-0157-4519 ; 0000-0002-1253-7011</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,776,780,785,786,881,23911,23912,25120,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25512225$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00641701$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>LU, Y</creatorcontrib><creatorcontrib>ZIANI, A</creatorcontrib><creatorcontrib>SHARAIHA, A</creatorcontrib><creatorcontrib>LE PAVEN-THIVET, C</creatorcontrib><creatorcontrib>BENZERGA, R</creatorcontrib><creatorcontrib>LE GENDRE, L</creatorcontrib><creatorcontrib>FASQUELLE, D</creatorcontrib><creatorcontrib>KASSEM, H</creatorcontrib><creatorcontrib>TESSIER, F</creatorcontrib><creatorcontrib>VIGNERAS, V</creatorcontrib><creatorcontrib>CARRU, J.-C</creatorcontrib><title>Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies</title><title>Thin solid films</title><description>Lanthanum titanium oxynitride (LaTiOxNy) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxNy thin films deposited on conductive single crystal Nb-STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiOxNy polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiOxNy films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).</description><subject>Chemical Sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Dielectric thin films</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Material chemistry</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAQQC0EEqXwA9i8MDAk3NmJU7NV5VOqKAPMluPYxCUkYIfS8utJVdTppNN7J90j5BwhRUBxtUz76FIGiClgypg4ICOcFDJhBcdDMgLIIBEg4ZicxLgEAGSMj0j5bEO3iu--t7Rbb1rfB19ZOtcvfrF-2tC-9i11vvmI1_TG28aaATDU1Dpo09vgf3Xvu5YOVNP9UN1WtPZvNXXBfn3b1ngbT8mR0020Z_9zTF7vbl9mD8l8cf84m84Tw0H2CRMVE0JbwY3VUgDPCsFFKUtXZBMsK-mKssoBpRZ5mQkzcdxmrJBZpTGTzPExudzdrXWjPoP_0GGjOu3Vw3SutjsAkWEBuMKBxR1rQhdjsG4vIKhtULVUQ1C1DaoA1RB0cC52zqeORjcu6OG9uBdZng9JWc7_ALbqd14</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>LU, Y</creator><creator>ZIANI, A</creator><creator>SHARAIHA, A</creator><creator>LE PAVEN-THIVET, C</creator><creator>BENZERGA, R</creator><creator>LE GENDRE, L</creator><creator>FASQUELLE, D</creator><creator>KASSEM, H</creator><creator>TESSIER, F</creator><creator>VIGNERAS, V</creator><creator>CARRU, J.-C</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-5755-0041</orcidid><orcidid>https://orcid.org/0000-0002-1947-1860</orcidid><orcidid>https://orcid.org/0000-0003-0157-4519</orcidid><orcidid>https://orcid.org/0000-0002-1253-7011</orcidid></search><sort><creationdate>20111101</creationdate><title>Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies</title><author>LU, Y ; ZIANI, A ; SHARAIHA, A ; LE PAVEN-THIVET, C ; BENZERGA, R ; LE GENDRE, L ; FASQUELLE, D ; KASSEM, H ; TESSIER, F ; VIGNERAS, V ; CARRU, J.-C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-26d266ae63cea960347636b9bf7481bd9f7bd5019a65b46c8f3e42794da1492f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemical Sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Dielectric thin films</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Material chemistry</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LU, Y</creatorcontrib><creatorcontrib>ZIANI, A</creatorcontrib><creatorcontrib>SHARAIHA, A</creatorcontrib><creatorcontrib>LE PAVEN-THIVET, C</creatorcontrib><creatorcontrib>BENZERGA, R</creatorcontrib><creatorcontrib>LE GENDRE, L</creatorcontrib><creatorcontrib>FASQUELLE, D</creatorcontrib><creatorcontrib>KASSEM, H</creatorcontrib><creatorcontrib>TESSIER, F</creatorcontrib><creatorcontrib>VIGNERAS, V</creatorcontrib><creatorcontrib>CARRU, J.-C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LU, Y</au><au>ZIANI, A</au><au>SHARAIHA, A</au><au>LE PAVEN-THIVET, C</au><au>BENZERGA, R</au><au>LE GENDRE, L</au><au>FASQUELLE, D</au><au>KASSEM, H</au><au>TESSIER, F</au><au>VIGNERAS, V</au><au>CARRU, J.-C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies</atitle><jtitle>Thin solid films</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>520</volume><issue>2</issue><spage>778</spage><epage>783</epage><pages>778-783</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Lanthanum titanium oxynitride (LaTiOxNy) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxNy thin films deposited on conductive single crystal Nb-STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiOxNy polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiOxNy films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2011.01.226</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-5755-0041</orcidid><orcidid>https://orcid.org/0000-0002-1947-1860</orcidid><orcidid>https://orcid.org/0000-0003-0157-4519</orcidid><orcidid>https://orcid.org/0000-0002-1253-7011</orcidid></addata></record> |
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| subjects | Chemical Sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Material chemistry Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies |
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