Effect of dimensional parameters on the current of MSM photodetector

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1μm2 and 10×10μm2 with equ...

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Veröffentlicht in:	Microelectronics 2011-08, Vol.42 (8), p.1006-1009
Hauptverfasser:	Zebentout, A.D., Bensaad, Z., Zegaoui, M., Aissat, A., Decoster, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Darkness Electrodes Engineering Sciences Gallium arsenide Gallium arsenide (GaAs) Gallium arsenides Illumination Metal–semiconductor–metal (MSM) Photocurrent Photodetectors Photoelectric effect Schottky contact
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