Low temperature Si doped ZnO thin films for transparent conducting oxides

Si doped zinc oxide (SZO, Si 3%) thin films are grown at low substrate temperature ( T≤150 °C) under oxygen atmosphere, using pulsed laser deposition (PLD). Si addition leads to film amorphization and higher densification. Hall effect measurements indicate a resistivity of 7.9×10 −4 Ω cm for SZO thi...

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Veröffentlicht in:	Solar energy materials and solar cells 2011-08, Vol.95 (8), p.2357-2362
Hauptverfasser:	Clatot, J., Campet, G., Zeinert, A., Labrugère, C., Nistor, M., Rougier, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Deposition Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Material chemistry Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Pulsed laser deposition Silicon Silicon substrates Simulation Thin films Transparent conducting oxide Valence Zinc oxide
Online-Zugang:	Volltext
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