Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

We report on extremely sensitive measurements of changes in the microwave properties of high purity nonintentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide, and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperature...

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Veröffentlicht in:	Journal of applied physics 2010-11, Vol.108 (10), p.104107-104107-6
Hauptverfasser:	Mouneyrac, David, Hartnett, John G., Le Floch, Jean-Michel, Tobar, Michael E., Cros, Dominique, Krupka, Jerzy
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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