Realization and optical characterization of etched mirror facets in GaN cavities

Realization and optical characterization of etched mirror facets in GaN cavities

We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various g...

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Veröffentlicht in:Applied physics letters 1998-02, Vol.72 (8), p.960-962
Hauptverfasser: Binet, F., Duboz, J. Y., Laurent, N., Bonnat, C., Collot, P., Hanauer, F., Briot, O., Aulombard, R. L.
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Condensed Matter
Materials Science
Physics
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container_end_page 962
container_issue 8
container_start_page 960
container_title Applied physics letters
container_volume 72
creator Binet, F.
Duboz, J. Y.
Laurent, N.
Bonnat, C.
Collot, P.
Hanauer, F.
Briot, O.
Aulombard, R. L.
description We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air–GaN interface. This demonstrates the high quality of the etched mirror facets.
doi_str_mv 10.1063/1.120934
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subjects Condensed Matter
Materials Science
Physics
title Realization and optical characterization of etched mirror facets in GaN cavities
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