Acoustic phonon-assisted resonant tunneling via single impurities

Acoustic phonon-assisted resonant tunneling via single impurities

We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2004-04, Vol.69 (16), Article 165302
Hauptverfasser: Gryglas, M., Baj, M., Chenaud, B., Jouault, B., Cavanna, A., Faini, G.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Materials Science
Physics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 16
container_start_page
container_title Physical review. B, Condensed matter and materials physics
container_volume 69
creator Gryglas, M.
Baj, M.
Chenaud, B.
Jouault, B.
Cavanna, A.
Faini, G.
description We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.
doi_str_mv 10.1103/PhysRevB.69.165302
format Article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00544445v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00544445v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c281t-ecabde4f0f413310c809000a60752ca3ef25d6b3851b69059aa5ee8536724f543</originalsourceid><addsrcrecordid>eNo9kE9Lw0AQxRdRsFa_gKdcPaTO7L9mj7FoKwQUUfC2bLcbu5JuSiYt9NubUvVd5vF48w4_xm4RJogg7l_XB3oL-4eJNhPUSgA_YyNUCnIu1Of54MEUOSDHS3ZF9A2A0kg-YmXp2x310WfbdZvalDuiSH1YZV2gNrnUZ_0updDE9JXto8toME3I4ma762IfA12zi9o1FG5-75h9PD2-zxZ59TJ_npVV7nmBfR68W66CrKGWKASCL8AAgNMwVdw7EWquVnopCoVLbUAZ51QIhRJ6ymWtpBizu9Pu2jV228WN6w62ddEuysoeMwAlB6k9Dl1-6vquJepC_f-AYI_A7B8wq409ARM_2clgPQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Acoustic phonon-assisted resonant tunneling via single impurities</title><source>American Physical Society Journals</source><creator>Gryglas, M. ; Baj, M. ; Chenaud, B. ; Jouault, B. ; Cavanna, A. ; Faini, G.</creator><creatorcontrib>Gryglas, M. ; Baj, M. ; Chenaud, B. ; Jouault, B. ; Cavanna, A. ; Faini, G.</creatorcontrib><description>We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.69.165302</identifier><language>eng</language><publisher>American Physical Society</publisher><subject>Condensed Matter ; Materials Science ; Physics</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (16), Article 165302</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c281t-ecabde4f0f413310c809000a60752ca3ef25d6b3851b69059aa5ee8536724f543</citedby><cites>FETCH-LOGICAL-c281t-ecabde4f0f413310c809000a60752ca3ef25d6b3851b69059aa5ee8536724f543</cites><orcidid>0000-0002-2993-6916 ; 0000-0002-0786-3445</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00544445$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Gryglas, M.</creatorcontrib><creatorcontrib>Baj, M.</creatorcontrib><creatorcontrib>Chenaud, B.</creatorcontrib><creatorcontrib>Jouault, B.</creatorcontrib><creatorcontrib>Cavanna, A.</creatorcontrib><creatorcontrib>Faini, G.</creatorcontrib><title>Acoustic phonon-assisted resonant tunneling via single impurities</title><title>Physical review. B, Condensed matter and materials physics</title><description>We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.</description><subject>Condensed Matter</subject><subject>Materials Science</subject><subject>Physics</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNo9kE9Lw0AQxRdRsFa_gKdcPaTO7L9mj7FoKwQUUfC2bLcbu5JuSiYt9NubUvVd5vF48w4_xm4RJogg7l_XB3oL-4eJNhPUSgA_YyNUCnIu1Of54MEUOSDHS3ZF9A2A0kg-YmXp2x310WfbdZvalDuiSH1YZV2gNrnUZ_0updDE9JXto8toME3I4ma762IfA12zi9o1FG5-75h9PD2-zxZ59TJ_npVV7nmBfR68W66CrKGWKASCL8AAgNMwVdw7EWquVnopCoVLbUAZ51QIhRJ6ymWtpBizu9Pu2jV228WN6w62ddEuysoeMwAlB6k9Dl1-6vquJepC_f-AYI_A7B8wq409ARM_2clgPQ</recordid><startdate>20040401</startdate><enddate>20040401</enddate><creator>Gryglas, M.</creator><creator>Baj, M.</creator><creator>Chenaud, B.</creator><creator>Jouault, B.</creator><creator>Cavanna, A.</creator><creator>Faini, G.</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-2993-6916</orcidid><orcidid>https://orcid.org/0000-0002-0786-3445</orcidid></search><sort><creationdate>20040401</creationdate><title>Acoustic phonon-assisted resonant tunneling via single impurities</title><author>Gryglas, M. ; Baj, M. ; Chenaud, B. ; Jouault, B. ; Cavanna, A. ; Faini, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-ecabde4f0f413310c809000a60752ca3ef25d6b3851b69059aa5ee8536724f543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed Matter</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gryglas, M.</creatorcontrib><creatorcontrib>Baj, M.</creatorcontrib><creatorcontrib>Chenaud, B.</creatorcontrib><creatorcontrib>Jouault, B.</creatorcontrib><creatorcontrib>Cavanna, A.</creatorcontrib><creatorcontrib>Faini, G.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gryglas, M.</au><au>Baj, M.</au><au>Chenaud, B.</au><au>Jouault, B.</au><au>Cavanna, A.</au><au>Faini, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Acoustic phonon-assisted resonant tunneling via single impurities</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2004-04-01</date><risdate>2004</risdate><volume>69</volume><issue>16</issue><artnum>165302</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.</abstract><pub>American Physical Society</pub><doi>10.1103/PhysRevB.69.165302</doi><orcidid>https://orcid.org/0000-0002-2993-6916</orcidid><orcidid>https://orcid.org/0000-0002-0786-3445</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1098-0121
ispartof Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (16), Article 165302
issn 1098-0121
1550-235X
language eng
recordid cdi_hal_primary_oai_HAL_hal_00544445v1
source American Physical Society Journals
subjects Condensed Matter
Materials Science
Physics
title Acoustic phonon-assisted resonant tunneling via single impurities
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T09%3A03%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Acoustic%20phonon-assisted%20resonant%20tunneling%20via%20single%20impurities&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Gryglas,%20M.&rft.date=2004-04-01&rft.volume=69&rft.issue=16&rft.artnum=165302&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.69.165302&rft_dat=%3Chal_cross%3Eoai_HAL_hal_00544445v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true