Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC
Using a graphite cap to cover the silicon carbide (SiC) sample, it is shown that large isolated graphene anisotropic ribbons can be grown on the C face of on-axis, semi-insulating, 6H-SiC wafers. The role of the cap is to modify the physics of the surface reconstruction process during Si sublimation...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2009-09, Vol.80 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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