Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC

Using a graphite cap to cover the silicon carbide (SiC) sample, it is shown that large isolated graphene anisotropic ribbons can be grown on the C face of on-axis, semi-insulating, 6H-SiC wafers. The role of the cap is to modify the physics of the surface reconstruction process during Si sublimation...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2009-09, Vol.80
Hauptverfasser: Camara, Nicolas, Huntzinger, Jean-Roch, Rius, Gemma, Tiberj, Antoine, Mestres, Narcis, Perez-Murano, Francesc, Godignon, Philippe, Camassel, Jean
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Sprache:eng
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