Novel dielectric capping layer approach for advanced copper interconnects using chemical grafting

Due to its low bulk resistivity copper has become the material of choice for ULSI interconnects. However its high diffusivity in dielectrics and weak chemical bonding to low- k materials require a capping layer as diffusion barrier and to improve adhesion. In order to control the copper-capping laye...

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Veröffentlicht in:	Microelectronic engineering 2006-11, Vol.83 (11), p.2088-2093
Hauptverfasser:	Bispo, I., Couturier, B., Haumesser, P.H., Mangiagalli, P., Monchoix, H., Passemard, G., Peyne, C., Roy, S., Thieriet, N., Rabinzohn, P., Bureau, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesion Applied sciences Capping Chemical grafting Design. Technologies. Operation analysis. Testing Electromigration Electronics Engineering Sciences Exact sciences and technology Integrated circuits Materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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