Compact modeling of optically gated carbon nanotube field effect transistor

Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electro...

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Veröffentlicht in:Physica status solidi. B. Basic research 2010-08, Vol.247 (8), p.1858-1861
Hauptverfasser: Liao, Si-Yu, Maneux, Cristell, Pouget, Vincent, Frégonèse, Sébastien, Zimmer, Thomas
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container_issue 8
container_start_page 1858
container_title Physica status solidi. B. Basic research
container_volume 247
creator Liao, Si-Yu
Maneux, Cristell
Pouget, Vincent
Frégonèse, Sébastien
Zimmer, Thomas
description Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements.
doi_str_mv 10.1002/pssb.200983818
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source Wiley Online Library All Journals
subjects Applied sciences
carbon nanotubes
design
Electronics
Engineering Sciences
Exact sciences and technology
field effect transistor
Micro and nanotechnologies
Microelectronics
modeling
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
trapping/detrapping
title Compact modeling of optically gated carbon nanotube field effect transistor
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