Compact modeling of optically gated carbon nanotube field effect transistor
Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electro...
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Veröffentlicht in: | Physica status solidi. B. Basic research 2010-08, Vol.247 (8), p.1858-1861 |
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container_title | Physica status solidi. B. Basic research |
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creator | Liao, Si-Yu Maneux, Cristell Pouget, Vincent Frégonèse, Sébastien Zimmer, Thomas |
description | Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements. |
doi_str_mv | 10.1002/pssb.200983818 |
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fullrecord | <record><control><sourceid>istex_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00495144v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_MKR17CWM_J</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4318-14102a7be47077eb0773e13d1d051e5c9962d3fe57a8f012b6056302787f33163</originalsourceid><addsrcrecordid>eNqFkM9PgzAUxxujiXN69czFgwfmey1QOCrRTbepcZodmwLtRBklFH_svxeCId689CXN9_N9eR9CThEmCEAvKmuTCQWIQhZiuEdG6FN0WeTjPhkB4-BixOkhObL2DQA4MhyReWy2lUwbZ2syVeTlxjHaMVWTp7Iods5GNipzUlknpnRKWZrmI1GOzlWROUpr1YJNLUub28bUx-RAy8Kqk985Ji8318_xzF08TG_jy4WbegxDFz0EKnmiPA6cq6R9mEKWYQY-Kj-NooBmTCufy1AD0iQAP2BAecg1YxiwMTnve19lIao638p6J4zMxexyIbo_AK-92vM-sc1O-mxaG2trpQcAQXTaRKdNDNpa4KwHKmlbB7q9Ls3tQFEGfsShK4763FdeqN0_reJxtbr6u8Pt2Vab-h5YWb-LgDPui_X9VCznT8jj9VLcsR_kXIxC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Compact modeling of optically gated carbon nanotube field effect transistor</title><source>Wiley Online Library All Journals</source><creator>Liao, Si-Yu ; Maneux, Cristell ; Pouget, Vincent ; Frégonèse, Sébastien ; Zimmer, Thomas</creator><creatorcontrib>Liao, Si-Yu ; Maneux, Cristell ; Pouget, Vincent ; Frégonèse, Sébastien ; Zimmer, Thomas</creatorcontrib><description>Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200983818</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Applied sciences ; carbon nanotubes ; design ; Electronics ; Engineering Sciences ; Exact sciences and technology ; field effect transistor ; Micro and nanotechnologies ; Microelectronics ; modeling ; Molecular electronics, nanoelectronics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; trapping/detrapping</subject><ispartof>Physica status solidi. B. Basic research, 2010-08, Vol.247 (8), p.1858-1861</ispartof><rights>Copyright © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4318-14102a7be47077eb0773e13d1d051e5c9962d3fe57a8f012b6056302787f33163</citedby><cites>FETCH-LOGICAL-c4318-14102a7be47077eb0773e13d1d051e5c9962d3fe57a8f012b6056302787f33163</cites><orcidid>0000-0001-9125-5372 ; 0000-0001-6126-6708 ; 0000-0002-1829-2633</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.200983818$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.200983818$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,309,310,314,780,784,789,790,885,1417,23930,23931,25140,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23059701$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00495144$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Liao, Si-Yu</creatorcontrib><creatorcontrib>Maneux, Cristell</creatorcontrib><creatorcontrib>Pouget, Vincent</creatorcontrib><creatorcontrib>Frégonèse, Sébastien</creatorcontrib><creatorcontrib>Zimmer, Thomas</creatorcontrib><title>Compact modeling of optically gated carbon nanotube field effect transistor</title><title>Physica status solidi. B. Basic research</title><addtitle>phys. stat. sol. (b)</addtitle><description>Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements.</description><subject>Applied sciences</subject><subject>carbon nanotubes</subject><subject>design</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>field effect transistor</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>modeling</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>trapping/detrapping</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM9PgzAUxxujiXN69czFgwfmey1QOCrRTbepcZodmwLtRBklFH_svxeCId689CXN9_N9eR9CThEmCEAvKmuTCQWIQhZiuEdG6FN0WeTjPhkB4-BixOkhObL2DQA4MhyReWy2lUwbZ2syVeTlxjHaMVWTp7Iods5GNipzUlknpnRKWZrmI1GOzlWROUpr1YJNLUub28bUx-RAy8Kqk985Ji8318_xzF08TG_jy4WbegxDFz0EKnmiPA6cq6R9mEKWYQY-Kj-NooBmTCufy1AD0iQAP2BAecg1YxiwMTnve19lIao638p6J4zMxexyIbo_AK-92vM-sc1O-mxaG2trpQcAQXTaRKdNDNpa4KwHKmlbB7q9Ls3tQFEGfsShK4763FdeqN0_reJxtbr6u8Pt2Vab-h5YWb-LgDPui_X9VCznT8jj9VLcsR_kXIxC</recordid><startdate>201008</startdate><enddate>201008</enddate><creator>Liao, Si-Yu</creator><creator>Maneux, Cristell</creator><creator>Pouget, Vincent</creator><creator>Frégonèse, Sébastien</creator><creator>Zimmer, Thomas</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9125-5372</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid><orcidid>https://orcid.org/0000-0002-1829-2633</orcidid></search><sort><creationdate>201008</creationdate><title>Compact modeling of optically gated carbon nanotube field effect transistor</title><author>Liao, Si-Yu ; Maneux, Cristell ; Pouget, Vincent ; Frégonèse, Sébastien ; Zimmer, Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4318-14102a7be47077eb0773e13d1d051e5c9962d3fe57a8f012b6056302787f33163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>carbon nanotubes</topic><topic>design</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>field effect transistor</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>modeling</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>trapping/detrapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, Si-Yu</creatorcontrib><creatorcontrib>Maneux, Cristell</creatorcontrib><creatorcontrib>Pouget, Vincent</creatorcontrib><creatorcontrib>Frégonèse, Sébastien</creatorcontrib><creatorcontrib>Zimmer, Thomas</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Physica status solidi. B. Basic research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liao, Si-Yu</au><au>Maneux, Cristell</au><au>Pouget, Vincent</au><au>Frégonèse, Sébastien</au><au>Zimmer, Thomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact modeling of optically gated carbon nanotube field effect transistor</atitle><jtitle>Physica status solidi. B. Basic research</jtitle><addtitle>phys. stat. sol. (b)</addtitle><date>2010-08</date><risdate>2010</risdate><volume>247</volume><issue>8</issue><spage>1858</spage><epage>1861</epage><pages>1858-1861</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.200983818</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-9125-5372</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid><orcidid>https://orcid.org/0000-0002-1829-2633</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Applied sciences carbon nanotubes design Electronics Engineering Sciences Exact sciences and technology field effect transistor Micro and nanotechnologies Microelectronics modeling Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors trapping/detrapping |
title | Compact modeling of optically gated carbon nanotube field effect transistor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T16%3A15%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Compact%20modeling%20of%20optically%20gated%20carbon%20nanotube%20field%20effect%20transistor&rft.jtitle=Physica%20status%20solidi.%20B.%20Basic%20research&rft.au=Liao,%20Si-Yu&rft.date=2010-08&rft.volume=247&rft.issue=8&rft.spage=1858&rft.epage=1861&rft.pages=1858-1861&rft.issn=0370-1972&rft.eissn=1521-3951&rft.coden=PSSBBD&rft_id=info:doi/10.1002/pssb.200983818&rft_dat=%3Cistex_hal_p%3Eark_67375_WNG_MKR17CWM_J%3C/istex_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |