Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma

Si Cl X  (X=0–2) radicals’ concentrations have been measured by broadband ultraviolet absorption spectroscopy during the etching of 200mm diameter silicon wafers in HBr∕Cl2∕O2 plasmas. We report the variations of the concentrations of these radicals as a function of the radio frequency (rf) source p...

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Veröffentlicht in:Journal of applied physics 2004-10, Vol.96 (8), p.4578-4587
Hauptverfasser: Cunge, G., Kogelschatz, M., Sadeghi, N.
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Kogelschatz, M.
Sadeghi, N.
description Si Cl X  (X=0–2) radicals’ concentrations have been measured by broadband ultraviolet absorption spectroscopy during the etching of 200mm diameter silicon wafers in HBr∕Cl2∕O2 plasmas. We report the variations of the concentrations of these radicals as a function of the radio frequency (rf) source power and rf-bias power. The silicon wafer etch rate is measured simultaneously. From the measured radicals densities and using electron impact ionization cross sections found in the literature, the densities of SiClX+ ions are calculated and are found to be in good agreement with ion densities measured by mass spectrometry. The upper limit for the SiCl2 radical concentration is calculated from the wafer etch rate. By comparison with the measured SiCl2 radical concentration it is concluded that SiCl2 radicals should also be produced by the reactor walls due to the etching of silicon containing species adsorbed on the reactor walls. Finally, using electron impact dissociation cross sections, the densities of SiCl and Si are calculated from the measured densities of SiCl2 and SiCl, respectively. The comparison between the calculated and measured values of SiClX densities allowed us to conclude that SiCl (and Si) are produced both in the gas phase by electron impact dissociation of SiCl2 (SiCl) radicals and at the reactor wall surfaces by the neutralization and reflection of ≈50% of the flux of SiCl+ (Si+) ions impinging on these surfaces. At the same time SiCl and Si are estimated to be lost (adsorption and abstraction reactions) on the reactor walls with a probability ranging between 0.2 and 1.
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We report the variations of the concentrations of these radicals as a function of the radio frequency (rf) source power and rf-bias power. The silicon wafer etch rate is measured simultaneously. From the measured radicals densities and using electron impact ionization cross sections found in the literature, the densities of SiClX+ ions are calculated and are found to be in good agreement with ion densities measured by mass spectrometry. The upper limit for the SiCl2 radical concentration is calculated from the wafer etch rate. By comparison with the measured SiCl2 radical concentration it is concluded that SiCl2 radicals should also be produced by the reactor walls due to the etching of silicon containing species adsorbed on the reactor walls. Finally, using electron impact dissociation cross sections, the densities of SiCl and Si are calculated from the measured densities of SiCl2 and SiCl, respectively. 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title Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma
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