12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

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Veröffentlicht in:	IEEE electron device letters 2009-04, Vol.30, p.322-324
Hauptverfasser:	Vandenbrouck, S., Madjour, K., Theron, D., Dong, Y.J., Li, Y., Lieber, C.M., Gaquière, Christophe
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences
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doi_str_mv	10.1109/LED.2009.2014791
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subjects	Engineering Sciences
title	12 GHz F-max GaN/AlN/AlGaN nanowire MISFET
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