Recent Progress in High-Speed Silicon-Based Optical Modulators

The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstra...

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Veröffentlicht in:Proceedings of the IEEE 2009-07, Vol.97 (7), p.1199-1215
Hauptverfasser: Marris-Morini, Delphine, Lyan, Philippe, Rivallin, Pierrette, Halbwax, Mathieu, Laval, Suzanne, Vivien, Laurent, Rasigade, Gilles, Fedeli, Jean-Marc, Cassan, Eric, Le Roux, Xavier, Crozat, Paul, Maine, Sylvain, Lupu, Anatole
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container_issue 7
container_start_page 1199
container_title Proceedings of the IEEE
container_volume 97
creator Marris-Morini, Delphine
Lyan, Philippe
Rivallin, Pierrette
Halbwax, Mathieu
Laval, Suzanne
Vivien, Laurent
Rasigade, Gilles
Fedeli, Jean-Marc
Cassan, Eric
Le Roux, Xavier
Crozat, Paul
Maine, Sylvain
Lupu, Anatole
description The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally investigated. Large phase modulation efficiency, low optical loss, and large cutoff frequency are obtained by considering simultaneously optical and electrical structure performances. Integrated Mach-Zehnder interferometers and resonators are compared to convert phase modulation into intensity modulation. Finally, recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented. It is based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide. This design allows a good overlap between the optical mode and carrier density variations. An insertion loss of 5 dB has been measured with a -3 dB bandwidth of 15 GHz.
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1558-2256
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source IEEE Electronic Library (IEL)
subjects Carrier depletion
Carriers
Depletion
High speed optical techniques
Integrated optics
Mach-Zehnder interferometers
Modulation
Modulators
Noise levels
Optical devices
Optical interferometry
Optical losses
Optical modulation
optical modulator
Optical resonators
Optical waveguides
Phase modulation
Silicon
Silicon germanides
silicon photonics
waveguide
title Recent Progress in High-Speed Silicon-Based Optical Modulators
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