Recent Progress in High-Speed Silicon-Based Optical Modulators
The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstra...
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Veröffentlicht in: | Proceedings of the IEEE 2009-07, Vol.97 (7), p.1199-1215 |
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creator | Marris-Morini, Delphine Lyan, Philippe Rivallin, Pierrette Halbwax, Mathieu Laval, Suzanne Vivien, Laurent Rasigade, Gilles Fedeli, Jean-Marc Cassan, Eric Le Roux, Xavier Crozat, Paul Maine, Sylvain Lupu, Anatole |
description | The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally investigated. Large phase modulation efficiency, low optical loss, and large cutoff frequency are obtained by considering simultaneously optical and electrical structure performances. Integrated Mach-Zehnder interferometers and resonators are compared to convert phase modulation into intensity modulation. Finally, recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented. It is based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide. This design allows a good overlap between the optical mode and carrier density variations. An insertion loss of 5 dB has been measured with a -3 dB bandwidth of 15 GHz. |
doi_str_mv | 10.1109/JPROC.2009.2015337 |
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Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally investigated. Large phase modulation efficiency, low optical loss, and large cutoff frequency are obtained by considering simultaneously optical and electrical structure performances. Integrated Mach-Zehnder interferometers and resonators are compared to convert phase modulation into intensity modulation. Finally, recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented. It is based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide. This design allows a good overlap between the optical mode and carrier density variations. An insertion loss of 5 dB has been measured with a -3 dB bandwidth of 15 GHz.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/JPROC.2009.2015337</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carrier depletion ; Carriers ; Depletion ; High speed optical techniques ; Integrated optics ; Mach-Zehnder interferometers ; Modulation ; Modulators ; Noise levels ; Optical devices ; Optical interferometry ; Optical losses ; Optical modulation ; optical modulator ; Optical resonators ; Optical waveguides ; Phase modulation ; Silicon ; Silicon germanides ; silicon photonics ; waveguide</subject><ispartof>Proceedings of the IEEE, 2009-07, Vol.97 (7), p.1199-1215</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c524t-3c249edf1c5857802fed3138039a3305df7632391cb0a6970240ffc40132d27b3</citedby><cites>FETCH-LOGICAL-c524t-3c249edf1c5857802fed3138039a3305df7632391cb0a6970240ffc40132d27b3</cites><orcidid>0000-0003-2802-7689 ; 0000-0002-1324-5029 ; 0000-0002-2980-7225 ; 0000-0002-2978-3913</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5075749$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5075749$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-00473046$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Marris-Morini, Delphine</creatorcontrib><creatorcontrib>Lyan, Philippe</creatorcontrib><creatorcontrib>Rivallin, Pierrette</creatorcontrib><creatorcontrib>Halbwax, Mathieu</creatorcontrib><creatorcontrib>Laval, Suzanne</creatorcontrib><creatorcontrib>Vivien, Laurent</creatorcontrib><creatorcontrib>Rasigade, Gilles</creatorcontrib><creatorcontrib>Fedeli, Jean-Marc</creatorcontrib><creatorcontrib>Cassan, Eric</creatorcontrib><creatorcontrib>Le Roux, Xavier</creatorcontrib><creatorcontrib>Crozat, Paul</creatorcontrib><creatorcontrib>Maine, Sylvain</creatorcontrib><creatorcontrib>Lupu, Anatole</creatorcontrib><title>Recent Progress in High-Speed Silicon-Based Optical Modulators</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally investigated. Large phase modulation efficiency, low optical loss, and large cutoff frequency are obtained by considering simultaneously optical and electrical structure performances. Integrated Mach-Zehnder interferometers and resonators are compared to convert phase modulation into intensity modulation. Finally, recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented. It is based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide. This design allows a good overlap between the optical mode and carrier density variations. An insertion loss of 5 dB has been measured with a -3 dB bandwidth of 15 GHz.</description><subject>Carrier depletion</subject><subject>Carriers</subject><subject>Depletion</subject><subject>High speed optical techniques</subject><subject>Integrated optics</subject><subject>Mach-Zehnder interferometers</subject><subject>Modulation</subject><subject>Modulators</subject><subject>Noise levels</subject><subject>Optical devices</subject><subject>Optical interferometry</subject><subject>Optical losses</subject><subject>Optical modulation</subject><subject>optical modulator</subject><subject>Optical resonators</subject><subject>Optical waveguides</subject><subject>Phase modulation</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>silicon photonics</subject><subject>waveguide</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0U9rFDEYBvAgFlxbv4BeBg-ih6nvm3fy7yLURd3KypZWzyHNZNqU6WSbzAp-e2fc0kMP6iUh4fckJA9jLxGOEcG8_3p2vlkecwAzDSiI1BO2QCF0zbmQT9kCAHVtOJpn7HkpNwBAQtKCfTgPPgxjdZbTVQ6lVHGoVvHqur7YhtBWF7GPPg31R1em1WY7Ru_66ltqd70bUy5H7KBzfQkv7udD9uPzp-_LVb3efDldnqxrL3gz1uR5Y0LboRdaKA28Cy0haSDjiEC0nZLEyaC_BCeNAt5A1_kGkHjL1SUdsnf7c69db7c53rr8yyYX7epkbec9gEYRNPInTvbN3m5zutuFMtrbWHzoezeEtCuWJDUG9Qzf_hWiUkASpPoPOiEujRbm3xQ4N4hCqYm-fkRv0i4P00daLbQWnNN8Nd8jn1MpOXQP70ewc_n2T_l2Lt_elz-FXu1DMYTwEBCghGoM_QYAj6W3</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Marris-Morini, Delphine</creator><creator>Lyan, Philippe</creator><creator>Rivallin, Pierrette</creator><creator>Halbwax, Mathieu</creator><creator>Laval, Suzanne</creator><creator>Vivien, Laurent</creator><creator>Rasigade, Gilles</creator><creator>Fedeli, Jean-Marc</creator><creator>Cassan, Eric</creator><creator>Le Roux, Xavier</creator><creator>Crozat, Paul</creator><creator>Maine, Sylvain</creator><creator>Lupu, Anatole</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-2802-7689</orcidid><orcidid>https://orcid.org/0000-0002-1324-5029</orcidid><orcidid>https://orcid.org/0000-0002-2980-7225</orcidid><orcidid>https://orcid.org/0000-0002-2978-3913</orcidid></search><sort><creationdate>20090701</creationdate><title>Recent Progress in High-Speed Silicon-Based Optical Modulators</title><author>Marris-Morini, Delphine ; Lyan, Philippe ; Rivallin, Pierrette ; Halbwax, Mathieu ; Laval, Suzanne ; Vivien, Laurent ; Rasigade, Gilles ; Fedeli, Jean-Marc ; Cassan, Eric ; Le Roux, Xavier ; Crozat, Paul ; Maine, Sylvain ; Lupu, Anatole</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c524t-3c249edf1c5857802fed3138039a3305df7632391cb0a6970240ffc40132d27b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Carrier depletion</topic><topic>Carriers</topic><topic>Depletion</topic><topic>High speed optical techniques</topic><topic>Integrated optics</topic><topic>Mach-Zehnder interferometers</topic><topic>Modulation</topic><topic>Modulators</topic><topic>Noise levels</topic><topic>Optical devices</topic><topic>Optical interferometry</topic><topic>Optical losses</topic><topic>Optical modulation</topic><topic>optical modulator</topic><topic>Optical resonators</topic><topic>Optical waveguides</topic><topic>Phase modulation</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>silicon photonics</topic><topic>waveguide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Marris-Morini, Delphine</creatorcontrib><creatorcontrib>Lyan, Philippe</creatorcontrib><creatorcontrib>Rivallin, Pierrette</creatorcontrib><creatorcontrib>Halbwax, Mathieu</creatorcontrib><creatorcontrib>Laval, Suzanne</creatorcontrib><creatorcontrib>Vivien, Laurent</creatorcontrib><creatorcontrib>Rasigade, Gilles</creatorcontrib><creatorcontrib>Fedeli, Jean-Marc</creatorcontrib><creatorcontrib>Cassan, Eric</creatorcontrib><creatorcontrib>Le Roux, Xavier</creatorcontrib><creatorcontrib>Crozat, Paul</creatorcontrib><creatorcontrib>Maine, Sylvain</creatorcontrib><creatorcontrib>Lupu, Anatole</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Marris-Morini, Delphine</au><au>Lyan, Philippe</au><au>Rivallin, Pierrette</au><au>Halbwax, Mathieu</au><au>Laval, Suzanne</au><au>Vivien, Laurent</au><au>Rasigade, Gilles</au><au>Fedeli, Jean-Marc</au><au>Cassan, Eric</au><au>Le Roux, Xavier</au><au>Crozat, Paul</au><au>Maine, Sylvain</au><au>Lupu, Anatole</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Recent Progress in High-Speed Silicon-Based Optical Modulators</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>2009-07-01</date><risdate>2009</risdate><volume>97</volume><issue>7</issue><spage>1199</spage><epage>1215</epage><pages>1199-1215</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally investigated. Large phase modulation efficiency, low optical loss, and large cutoff frequency are obtained by considering simultaneously optical and electrical structure performances. Integrated Mach-Zehnder interferometers and resonators are compared to convert phase modulation into intensity modulation. Finally, recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented. It is based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide. This design allows a good overlap between the optical mode and carrier density variations. An insertion loss of 5 dB has been measured with a -3 dB bandwidth of 15 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JPROC.2009.2015337</doi><tpages>17</tpages><orcidid>https://orcid.org/0000-0003-2802-7689</orcidid><orcidid>https://orcid.org/0000-0002-1324-5029</orcidid><orcidid>https://orcid.org/0000-0002-2980-7225</orcidid><orcidid>https://orcid.org/0000-0002-2978-3913</orcidid></addata></record> |
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subjects | Carrier depletion Carriers Depletion High speed optical techniques Integrated optics Mach-Zehnder interferometers Modulation Modulators Noise levels Optical devices Optical interferometry Optical losses Optical modulation optical modulator Optical resonators Optical waveguides Phase modulation Silicon Silicon germanides silicon photonics waveguide |
title | Recent Progress in High-Speed Silicon-Based Optical Modulators |
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