Low sensitivity to temperature compressive-strained structure quantum well laser Ga1−xInxAs1−yNy/GaAs
The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new techn...
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| Veröffentlicht in: | Microelectronics 2009-01, Vol.40 (1), p.10-14 |
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| creator | Aissat, A. Nacer, S. Bensebti, M. Vilcot, J.P. |
| description | The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new techniques of electric and optical confinement. Band structure is modelled and typical quantum well properties are illustrated. A thorough study of the structural parameters is undertaken to take into account from the design criteria the temperature sensitivity. Minimising the Auger coefficient in the order of 10−29cm6/s appears to allow achieving efficient laser diodes production. |
| doi_str_mv | 10.1016/j.mejo.2008.09.005 |
| format | Article |
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| identifier | ISSN: 1879-2391 |
| ispartof | Microelectronics, 2009-01, Vol.40 (1), p.10-14 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Engineering Sciences GaInNAsSb/GaAs Laser diode Optoelectronics Semiconductor Strained quantum wells—GaxIn1−x NyAs1−y/GaAs |
| title | Low sensitivity to temperature compressive-strained structure quantum well laser Ga1−xInxAs1−yNy/GaAs |
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