Self-heating study of bulk acoustic wave resonators under high RF power
The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and de...
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| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2008-01, Vol.55 (1), p.139-147 |
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| container_title | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
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| creator | Ivira, B. Fillit, R.-Y. Ndagijimana, F. Benech, P. Parat, G. Ancey, P. |
| description | The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mum/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified. |
| doi_str_mv | 10.1109/TUFFC.2008.623 |
| format | Article |
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This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mum/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified.</description><identifier>ISSN: 0885-3010</identifier><identifier>EISSN: 1525-8955</identifier><identifier>DOI: 10.1109/TUFFC.2008.623</identifier><identifier>PMID: 18334320</identifier><identifier>CODEN: ITUCER</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic measurements ; Acoustic reflection ; Acoustic wave devices, piezoelectric and piezoresistive devices ; Acoustic waves ; Acoustics ; Applied sciences ; Architecture ; Circuit properties ; Computer Simulation ; Computer-Aided Design ; Devices ; Drift ; Electric power generation ; Electric, optical and optoelectronic circuits ; Electromagnetism ; Electronics ; Energy Transfer ; Engineering Sciences ; Equipment Safety - methods ; Exact sciences and technology ; Film bulk acoustic resonators ; Fundamental areas of phenomenology (including applications) ; Hot Temperature ; Impedance measurement ; Materials ; Materials handling ; Microelectronic fabrication (materials and surfaces technology) ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Models, Theoretical ; Optical films ; Physics ; Power measurement ; Radio frequencies ; Radio frequency ; Radio Waves ; Radiometry ; Resonators ; Scattering, Radiation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor films ; Silicon ; Surface acoustic waves ; Transducers ; Transduction; acoustical devices for the generation and reproduction of sound ; Ultrasonography - instrumentation</subject><ispartof>IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2008-01, Vol.55 (1), p.139-147</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c533t-d9ed2d609ec9683e86156dc0237770360dcdf9445ef0229622a0dd5b315d884f3</citedby><cites>FETCH-LOGICAL-c533t-d9ed2d609ec9683e86156dc0237770360dcdf9445ef0229622a0dd5b315d884f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4454309$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,777,781,793,882,4010,27904,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4454309$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20047102$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18334320$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00397186$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Ivira, B.</creatorcontrib><creatorcontrib>Fillit, R.-Y.</creatorcontrib><creatorcontrib>Ndagijimana, F.</creatorcontrib><creatorcontrib>Benech, P.</creatorcontrib><creatorcontrib>Parat, G.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><title>Self-heating study of bulk acoustic wave resonators under high RF power</title><title>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</title><addtitle>T-UFFC</addtitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><description>The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mum/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified.</description><subject>Acoustic measurements</subject><subject>Acoustic reflection</subject><subject>Acoustic wave devices, piezoelectric and piezoresistive devices</subject><subject>Acoustic waves</subject><subject>Acoustics</subject><subject>Applied sciences</subject><subject>Architecture</subject><subject>Circuit properties</subject><subject>Computer Simulation</subject><subject>Computer-Aided Design</subject><subject>Devices</subject><subject>Drift</subject><subject>Electric power generation</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electromagnetism</subject><subject>Electronics</subject><subject>Energy Transfer</subject><subject>Engineering Sciences</subject><subject>Equipment Safety - methods</subject><subject>Exact sciences and technology</subject><subject>Film bulk acoustic resonators</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Hot Temperature</subject><subject>Impedance measurement</subject><subject>Materials</subject><subject>Materials handling</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Models, Theoretical</subject><subject>Optical films</subject><subject>Physics</subject><subject>Power measurement</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>Radio Waves</subject><subject>Radiometry</subject><subject>Resonators</subject><subject>Scattering, Radiation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>Silicon</subject><subject>Surface acoustic waves</subject><subject>Transducers</subject><subject>Transduction; acoustical devices for the generation and reproduction of sound</subject><subject>Ultrasonography - instrumentation</subject><issn>0885-3010</issn><issn>1525-8955</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>EIF</sourceid><recordid>eNqF0c9rFDEUB_Agil2rVy-CBEHFw6wveZNfx7K4rbAgaHsO2STTnTo7U5OZlv73ZrvLCh70FEg-ecl7X0JeM5gzBubz5dVyuZhzAD2XHJ-QGRNcVNoI8ZTMQGtRITA4IS9yvgFgdW34c3LCNGKNHGbk_EfsmmoT3dj21zSPU3igQ0PXU_eTOj9MeWw9vXd3kaaYh96NQ8p06kNMdNNeb-j3Jb0d7mN6SZ41rsvx1WE9JVfLL5eLi2r17fzr4mxVeYE4VsHEwIMEE72RGqOWTMjggaNSClBC8KExdS1iA5wbybmDEMQamQha1w2ekk_7uhvX2dvUbl16sINr7cXZyu72ANAopuUdK_bj3t6m4dcU82i3bfax61wfS2dWa4PKKKWL_PBPWb6mJTD1X4i1QKkVL_DdX_BmmFJfRmO1RANawA7N98inIecUm2NHDOwuXvsYr93Fa0u85cLbQ9VpvY3hDz_kWcD7A3DZu65JrvdtPrpSqFbs8eU3e9fGGI_HZe41gsHfR3yyKw</recordid><startdate>200801</startdate><enddate>200801</enddate><creator>Ivira, B.</creator><creator>Fillit, R.-Y.</creator><creator>Ndagijimana, F.</creator><creator>Benech, P.</creator><creator>Parat, G.</creator><creator>Ancey, P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor films</topic><topic>Silicon</topic><topic>Surface acoustic waves</topic><topic>Transducers</topic><topic>Transduction; acoustical devices for the generation and reproduction of sound</topic><topic>Ultrasonography - instrumentation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ivira, B.</creatorcontrib><creatorcontrib>Fillit, R.-Y.</creatorcontrib><creatorcontrib>Ndagijimana, F.</creatorcontrib><creatorcontrib>Benech, P.</creatorcontrib><creatorcontrib>Parat, G.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ivira, B.</au><au>Fillit, R.-Y.</au><au>Ndagijimana, F.</au><au>Benech, P.</au><au>Parat, G.</au><au>Ancey, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-heating study of bulk acoustic wave resonators under high RF power</atitle><jtitle>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</jtitle><stitle>T-UFFC</stitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><date>2008-01</date><risdate>2008</risdate><volume>55</volume><issue>1</issue><spage>139</spage><epage>147</epage><pages>139-147</pages><issn>0885-3010</issn><eissn>1525-8955</eissn><coden>ITUCER</coden><abstract>The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mum/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified.</abstract><cop>New York, NY</cop><pub>IEEE</pub><pmid>18334320</pmid><doi>10.1109/TUFFC.2008.623</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0885-3010 |
| ispartof | IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2008-01, Vol.55 (1), p.139-147 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acoustic measurements Acoustic reflection Acoustic wave devices, piezoelectric and piezoresistive devices Acoustic waves Acoustics Applied sciences Architecture Circuit properties Computer Simulation Computer-Aided Design Devices Drift Electric power generation Electric, optical and optoelectronic circuits Electromagnetism Electronics Energy Transfer Engineering Sciences Equipment Safety - methods Exact sciences and technology Film bulk acoustic resonators Fundamental areas of phenomenology (including applications) Hot Temperature Impedance measurement Materials Materials handling Microelectronic fabrication (materials and surfaces technology) Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Models, Theoretical Optical films Physics Power measurement Radio frequencies Radio frequency Radio Waves Radiometry Resonators Scattering, Radiation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon Surface acoustic waves Transducers Transduction acoustical devices for the generation and reproduction of sound Ultrasonography - instrumentation |
| title | Self-heating study of bulk acoustic wave resonators under high RF power |
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