Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator
Very high photoluminescence extraction is observed from defectless two-dimensional photonic crystals etched in the upper 200-nm-thick silicon layer of a silicon-on-insulator (SOI) substrate. Predicted very low group velocity modes near the Γ point of the band structure lying above the light line are...
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| Veröffentlicht in: | Applied physics letters 2003-09, Vol.83 (13), p.2542-2544 |
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| container_end_page | 2544 |
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| container_issue | 13 |
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| container_title | Applied physics letters |
| container_volume | 83 |
| creator | Zelsmann, M. Picard, E. Charvolin, T. Hadji, E. Heitzmann, M. Dal’zotto, B. Nier, M. E. Seassal, C. Rojo-Romeo, P. Letartre, X. |
| description | Very high photoluminescence extraction is observed from defectless two-dimensional photonic crystals etched in the upper 200-nm-thick silicon layer of a silicon-on-insulator (SOI) substrate. Predicted very low group velocity modes near the Γ point of the band structure lying above the light line are used to extract light from the photonic crystal slab into the free space. It is found that light is extracted on a 80-nm-wide band along directions near to the perpendicular to the slab, with an extraction enhancement up to 70 compared to an unpatterned SOI. |
| doi_str_mv | 10.1063/1.1614832 |
| format | Article |
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| ispartof | Applied physics letters, 2003-09, Vol.83 (13), p.2542-2544 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00390520v1 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator |
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