Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements

In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC–DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techn...

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Veröffentlicht in:Microelectronics and reliability 2007-09, Vol.47 (9), p.1456-1461
Hauptverfasser: Gao, Y., Guitard, N., Salamero, C., Bafleur, M., Bary, L., Escotte, L., Gueulle, P., Lescouzeres, L.
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Sprache:eng
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Zusammenfassung:In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC–DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2007.07.089