Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects occurring at the interface between hexagonal Boron Nitride (hBN) films and n-type Indium Phosphide (n-InP). The BN films are deposited on InP using plasma enhanced chemical vapor deposition....

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Veröffentlicht in:	Thin solid films 2008-04, Vol.516 (12), p.4122-4127
Hauptverfasser:	Mattalah, M., Telia, A., Soltani, A., De Jaeger, J.-C., Thevenin, P., Bath, A., Akkal, B., Abid, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology DLTS Exact sciences and technology Indium Phosphide Materials science Methods of deposition of films and coatings film growth and epitaxy Photoluminescence Physics Structure and morphology thickness Surface and interface states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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