AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers

This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such...

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Veröffentlicht in:Sensors and actuators. A. Physical. 2008-02, Vol.141 (2), p.565-576
Hauptverfasser: Andrei, Alexandru, Krupa, Katarzyna, Jozwik, Michal, Delobelle, Patrick, Hirsinger, Laurent, Gorecki, Christophe, Nieradko, Lukasz, Meunier, Cathy
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container_end_page 576
container_issue 2
container_start_page 565
container_title Sensors and actuators. A. Physical.
container_volume 141
creator Andrei, Alexandru
Krupa, Katarzyna
Jozwik, Michal
Delobelle, Patrick
Hirsinger, Laurent
Gorecki, Christophe
Nieradko, Lukasz
Meunier, Cathy
description This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (002) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient alpha and piezoelectric coefficient d31 have been calculated using non approximated equations able to take into account multiple film stacking. The well oriented thin films exhibit approximately the same properties as the bulk material.
doi_str_mv 10.1016/j.sna.2007.10.041
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fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00350132v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>31786892</sourcerecordid><originalsourceid>FETCH-LOGICAL-h135t-deed87f8aa2e867c381321717007482f46e86d533558798c92b3e4cfce0ef2553</originalsourceid><addsrcrecordid>eNotT01LwzAYDqLgnP4AbzkJHlrz0TbpcYzphE0PznN5l75lGVlbk3awf2_mPD08n_AQ8shZyhkvXvZpaCEVjKnIU5bxKzLhWslEsqK8JhNWiizJRKZuyV0Ie8aYlEpNyHbmPigECi0FM4ww2K6lBxjQW3C06TxdL9ZfFPreWfPnBrrZITUQkHYNPddrb48YW6MbrIMTeqyj30aCR_Thntw04AI-_OOUfL8uNvNlsvp8e5_PVsmOy3xIasRaq0YDCNSFMlJzKbjiKn7KtGiyIsp1LmWea1VqU4qtxMw0Bhk2Is_llDxfdnfgqt7bA_hT1YGtlrNVddbi55zF0SOP2adLtvfdz4hhqA42GHQOWuzGUEmudKFLIX8BD01mjw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31786892</pqid></control><display><type>article</type><title>AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers</title><source>Access via ScienceDirect (Elsevier)</source><creator>Andrei, Alexandru ; Krupa, Katarzyna ; Jozwik, Michal ; Delobelle, Patrick ; Hirsinger, Laurent ; Gorecki, Christophe ; Nieradko, Lukasz ; Meunier, Cathy</creator><creatorcontrib>Andrei, Alexandru ; Krupa, Katarzyna ; Jozwik, Michal ; Delobelle, Patrick ; Hirsinger, Laurent ; Gorecki, Christophe ; Nieradko, Lukasz ; Meunier, Cathy</creatorcontrib><description>This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (002) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient alpha and piezoelectric coefficient d31 have been calculated using non approximated equations able to take into account multiple film stacking. The well oriented thin films exhibit approximately the same properties as the bulk material.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2007.10.041</identifier><language>eng</language><publisher>Elsevier</publisher><subject>Engineering Sciences ; Mechanics ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>Sensors and actuators. A. Physical., 2008-02, Vol.141 (2), p.565-576</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4141-5654</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00350132$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Andrei, Alexandru</creatorcontrib><creatorcontrib>Krupa, Katarzyna</creatorcontrib><creatorcontrib>Jozwik, Michal</creatorcontrib><creatorcontrib>Delobelle, Patrick</creatorcontrib><creatorcontrib>Hirsinger, Laurent</creatorcontrib><creatorcontrib>Gorecki, Christophe</creatorcontrib><creatorcontrib>Nieradko, Lukasz</creatorcontrib><creatorcontrib>Meunier, Cathy</creatorcontrib><title>AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers</title><title>Sensors and actuators. A. Physical.</title><description>This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (002) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient alpha and piezoelectric coefficient d31 have been calculated using non approximated equations able to take into account multiple film stacking. The well oriented thin films exhibit approximately the same properties as the bulk material.</description><subject>Engineering Sciences</subject><subject>Mechanics</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotT01LwzAYDqLgnP4AbzkJHlrz0TbpcYzphE0PznN5l75lGVlbk3awf2_mPD08n_AQ8shZyhkvXvZpaCEVjKnIU5bxKzLhWslEsqK8JhNWiizJRKZuyV0Ie8aYlEpNyHbmPigECi0FM4ww2K6lBxjQW3C06TxdL9ZfFPreWfPnBrrZITUQkHYNPddrb48YW6MbrIMTeqyj30aCR_Thntw04AI-_OOUfL8uNvNlsvp8e5_PVsmOy3xIasRaq0YDCNSFMlJzKbjiKn7KtGiyIsp1LmWea1VqU4qtxMw0Bhk2Is_llDxfdnfgqt7bA_hT1YGtlrNVddbi55zF0SOP2adLtvfdz4hhqA42GHQOWuzGUEmudKFLIX8BD01mjw</recordid><startdate>20080215</startdate><enddate>20080215</enddate><creator>Andrei, Alexandru</creator><creator>Krupa, Katarzyna</creator><creator>Jozwik, Michal</creator><creator>Delobelle, Patrick</creator><creator>Hirsinger, Laurent</creator><creator>Gorecki, Christophe</creator><creator>Nieradko, Lukasz</creator><creator>Meunier, Cathy</creator><general>Elsevier</general><scope>7QF</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-4141-5654</orcidid></search><sort><creationdate>20080215</creationdate><title>AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers</title><author>Andrei, Alexandru ; Krupa, Katarzyna ; Jozwik, Michal ; Delobelle, Patrick ; Hirsinger, Laurent ; Gorecki, Christophe ; Nieradko, Lukasz ; Meunier, Cathy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h135t-deed87f8aa2e867c381321717007482f46e86d533558798c92b3e4cfce0ef2553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Engineering Sciences</topic><topic>Mechanics</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andrei, Alexandru</creatorcontrib><creatorcontrib>Krupa, Katarzyna</creatorcontrib><creatorcontrib>Jozwik, Michal</creatorcontrib><creatorcontrib>Delobelle, Patrick</creatorcontrib><creatorcontrib>Hirsinger, Laurent</creatorcontrib><creatorcontrib>Gorecki, Christophe</creatorcontrib><creatorcontrib>Nieradko, Lukasz</creatorcontrib><creatorcontrib>Meunier, Cathy</creatorcontrib><collection>Aluminium Industry Abstracts</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andrei, Alexandru</au><au>Krupa, Katarzyna</au><au>Jozwik, Michal</au><au>Delobelle, Patrick</au><au>Hirsinger, Laurent</au><au>Gorecki, Christophe</au><au>Nieradko, Lukasz</au><au>Meunier, Cathy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2008-02-15</date><risdate>2008</risdate><volume>141</volume><issue>2</issue><spage>565</spage><epage>576</epage><pages>565-576</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>This paper treats a wide range of subjects related to the use of AlN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AlN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (002) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient alpha and piezoelectric coefficient d31 have been calculated using non approximated equations able to take into account multiple film stacking. The well oriented thin films exhibit approximately the same properties as the bulk material.</abstract><pub>Elsevier</pub><doi>10.1016/j.sna.2007.10.041</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-4141-5654</orcidid><oa>free_for_read</oa></addata></record>
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Micro and nanotechnologies
Microelectronics
title AlN as an actuation material for MEMS applications The case of AlN driven multilayered cantilevers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T06%3A47%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=AlN%20as%20an%20actuation%20material%20for%20MEMS%20applications%20The%20case%20of%20AlN%20driven%20multilayered%20cantilevers&rft.jtitle=Sensors%20and%20actuators.%20A.%20Physical.&rft.au=Andrei,%20Alexandru&rft.date=2008-02-15&rft.volume=141&rft.issue=2&rft.spage=565&rft.epage=576&rft.pages=565-576&rft.issn=0924-4247&rft.eissn=1873-3069&rft_id=info:doi/10.1016/j.sna.2007.10.041&rft_dat=%3Cproquest_hal_p%3E31786892%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=31786892&rft_id=info:pmid/&rfr_iscdi=true