Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs

In this paper, we present a new numerical model of the gate leakage current noise in ultra-thin gate oxides. Unlike previous classical models, our model takes into account ultra-thin gate oxides. Localized noise sources in the oxide are implanted into the model, and by using a Green’s function appro...

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Veröffentlicht in:	Microelectronic engineering 2007-09, Vol.84 (9), p.2382-2385
Hauptverfasser:	Armand, J., Martinez, F., Valenza, M., Rochereau, K., Vincent, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Engineering Sciences Exact sciences and technology Green’s function Low frequency noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Trap profiles
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container_end_page	2385
container_issue	9
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container_title	Microelectronic engineering
container_volume	84
creator	Armand, J. Martinez, F. Valenza, M. Rochereau, K. Vincent, E.
description	In this paper, we present a new numerical model of the gate leakage current noise in ultra-thin gate oxides. Unlike previous classical models, our model takes into account ultra-thin gate oxides. Localized noise sources in the oxide are implanted into the model, and by using a Green’s function approach, the spectral cross-correlation of the electrical potential is evaluated at each node in the device mesh in order to obtain a highly accurate physical description. By comparing results from simulated devices with experimental noise measurements, we were able to determine the slow oxide trap density profiles. The latter are in good agreement with profiles expected from nitruration processes.
doi_str_mv	10.1016/j.mee.2007.04.099
format	Article
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subjects	Applied sciences Electronics Engineering Sciences Exact sciences and technology Green’s function Low frequency noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Trap profiles
title	Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs
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