Evidence for a shallow level structure in the bulk of semi-insulating GaAs

The technique of thermally stimulated conductivity is applied to the spectroscopy of shallow trap levels in semi-insulting GaAs. Twelve previously unknown conductivity peaks are reported and the activation energy for thermal release of carriers trapped in the corresponding levels are determined with...

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Veröffentlicht in:	Journal of applied physics 1980-09, Vol.51 (9), p.4894-4897
Hauptverfasser:	Castagne, M., Bonnafe, J., Manifacier, J. C., Fillard, J. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics Engineering Sciences
Online-Zugang:	Volltext
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