Electronic charge transport in high-resistivity semiconductors
The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with...
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| Veröffentlicht in: | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1985-09, Vol.52 (3), p.379-389 |
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| container_end_page | 389 |
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| container_issue | 3 |
| container_start_page | 379 |
| container_title | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. |
| container_volume | 52 |
| creator | Henisch, H. K. Manifacier, J.-C. Moreau, Y. |
| description | The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with its effect on the prevailing field, recombination, and carrier concentration contours, as well as the overall measured resistance of the system. The corresponding equations have to be solved numerically, and are shown to be very sensitive to the assumed boundary conditions. These considerations are of substantial importance for the interpretation of electrical measurements on semi-insulators, and the design of future experiments. |
| doi_str_mv | 10.1080/13642818508240609 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00323196v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298104606</sourcerecordid><originalsourceid>FETCH-LOGICAL-c387t-6058aa480f74cc896e2ea0d07d5fac1816ba1b99e35b16108ec0b2a3edb9b7363</originalsourceid><addsrcrecordid>eNp1kMFLwzAUxoMoOOb-AG8FTx6q7zVtmoIIY0wnDLzoOaRpuka6ZibZZP-9GRUv4uW9R97v-3j5CLlGuEPgcI-U5RlHXgDPcmBQnZEJ5oymLMfyPM5xn0YguyQz700NkNGSxjohj8teq-DsYFSiOuk2OglODn5nXUjMkHRm06VOe-ODOZhwTLzeGmWHZq-Cdf6KXLSy93r206fk_Wn5tlil69fnl8V8nSrKy5AyKLiUOYe2zJXiFdOZltBA2RStVMiR1RLrqtK0qJHFP2kFdSapbuqqLimjU3I7-nayFztnttIdhZVGrOZrcXoDoBnFih0wsjcju3P2c699EB9274Z4nsCs4gg5g5MjjpRy1nun219bBHFKVfxJNWoeRo0ZWuu28su6vhFBHnvr2piaMl7Q_-Xfifd7tw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298104606</pqid></control><display><type>article</type><title>Electronic charge transport in high-resistivity semiconductors</title><source>Periodicals Index Online</source><source>Taylor & Francis:Master (3349 titles)</source><creator>Henisch, H. K. ; Manifacier, J.-C. ; Moreau, Y.</creator><creatorcontrib>Henisch, H. K. ; Manifacier, J.-C. ; Moreau, Y.</creatorcontrib><description>The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with its effect on the prevailing field, recombination, and carrier concentration contours, as well as the overall measured resistance of the system. The corresponding equations have to be solved numerically, and are shown to be very sensitive to the assumed boundary conditions. These considerations are of substantial importance for the interpretation of electrical measurements on semi-insulators, and the design of future experiments.</description><identifier>ISSN: 1364-2812</identifier><identifier>ISSN: 0141-8637</identifier><identifier>EISSN: 1463-6417</identifier><identifier>DOI: 10.1080/13642818508240609</identifier><language>eng</language><publisher>London: Taylor & Francis Group</publisher><subject>Electronics ; Engineering Sciences</subject><ispartof>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1985-09, Vol.52 (3), p.379-389</ispartof><rights>Copyright Taylor & Francis Group, LLC 1985</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-6058aa480f74cc896e2ea0d07d5fac1816ba1b99e35b16108ec0b2a3edb9b7363</citedby><cites>FETCH-LOGICAL-c387t-6058aa480f74cc896e2ea0d07d5fac1816ba1b99e35b16108ec0b2a3edb9b7363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/13642818508240609$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/13642818508240609$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>230,314,780,784,885,27869,27924,27925,59647,60436</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00323196$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Henisch, H. K.</creatorcontrib><creatorcontrib>Manifacier, J.-C.</creatorcontrib><creatorcontrib>Moreau, Y.</creatorcontrib><title>Electronic charge transport in high-resistivity semiconductors</title><title>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</title><description>The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with its effect on the prevailing field, recombination, and carrier concentration contours, as well as the overall measured resistance of the system. The corresponding equations have to be solved numerically, and are shown to be very sensitive to the assumed boundary conditions. These considerations are of substantial importance for the interpretation of electrical measurements on semi-insulators, and the design of future experiments.</description><subject>Electronics</subject><subject>Engineering Sciences</subject><issn>1364-2812</issn><issn>0141-8637</issn><issn>1463-6417</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNp1kMFLwzAUxoMoOOb-AG8FTx6q7zVtmoIIY0wnDLzoOaRpuka6ZibZZP-9GRUv4uW9R97v-3j5CLlGuEPgcI-U5RlHXgDPcmBQnZEJ5oymLMfyPM5xn0YguyQz700NkNGSxjohj8teq-DsYFSiOuk2OglODn5nXUjMkHRm06VOe-ODOZhwTLzeGmWHZq-Cdf6KXLSy93r206fk_Wn5tlil69fnl8V8nSrKy5AyKLiUOYe2zJXiFdOZltBA2RStVMiR1RLrqtK0qJHFP2kFdSapbuqqLimjU3I7-nayFztnttIdhZVGrOZrcXoDoBnFih0wsjcju3P2c699EB9274Z4nsCs4gg5g5MjjpRy1nun219bBHFKVfxJNWoeRo0ZWuu28su6vhFBHnvr2piaMl7Q_-Xfifd7tw</recordid><startdate>19850901</startdate><enddate>19850901</enddate><creator>Henisch, H. K.</creator><creator>Manifacier, J.-C.</creator><creator>Moreau, Y.</creator><general>Taylor & Francis Group</general><general>Taylor and Francis</general><general>Informa UK (Taylor & Francis)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>HAGHG</scope><scope>IZSXY</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope><scope>1XC</scope></search><sort><creationdate>19850901</creationdate><title>Electronic charge transport in high-resistivity semiconductors</title><author>Henisch, H. K. ; Manifacier, J.-C. ; Moreau, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-6058aa480f74cc896e2ea0d07d5fac1816ba1b99e35b16108ec0b2a3edb9b7363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Electronics</topic><topic>Engineering Sciences</topic><toplevel>online_resources</toplevel><creatorcontrib>Henisch, H. K.</creatorcontrib><creatorcontrib>Manifacier, J.-C.</creatorcontrib><creatorcontrib>Moreau, Y.</creatorcontrib><collection>CrossRef</collection><collection>Periodicals Index Online Segment 12</collection><collection>Periodicals Index Online Segment 30</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access & Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access & Build (Plan A) - APAC</collection><collection>Primary Sources Access & Build (Plan A) - Canada</collection><collection>Primary Sources Access & Build (Plan A) - West</collection><collection>Primary Sources Access & Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - Midwest</collection><collection>Primary Sources Access & Build (Plan A) - North Central</collection><collection>Primary Sources Access & Build (Plan A) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Henisch, H. K.</au><au>Manifacier, J.-C.</au><au>Moreau, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic charge transport in high-resistivity semiconductors</atitle><jtitle>Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties.</jtitle><date>1985-09-01</date><risdate>1985</risdate><volume>52</volume><issue>3</issue><spage>379</spage><epage>389</epage><pages>379-389</pages><issn>1364-2812</issn><issn>0141-8637</issn><eissn>1463-6417</eissn><abstract>The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with its effect on the prevailing field, recombination, and carrier concentration contours, as well as the overall measured resistance of the system. The corresponding equations have to be solved numerically, and are shown to be very sensitive to the assumed boundary conditions. These considerations are of substantial importance for the interpretation of electrical measurements on semi-insulators, and the design of future experiments.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/13642818508240609</doi><tpages>11</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1364-2812 |
| ispartof | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1985-09, Vol.52 (3), p.379-389 |
| issn | 1364-2812 0141-8637 1463-6417 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00323196v1 |
| source | Periodicals Index Online; Taylor & Francis:Master (3349 titles) |
| subjects | Electronics Engineering Sciences |
| title | Electronic charge transport in high-resistivity semiconductors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T21%3A42%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electronic%20charge%20transport%20in%20high-resistivity%20semiconductors&rft.jtitle=Philosophical%20magazine.%20B,%20Physics%20of%20condensed%20matter.%20Structural,%20electronic,%20optical,%20and%20magnetic%20properties.&rft.au=Henisch,%20H.%20K.&rft.date=1985-09-01&rft.volume=52&rft.issue=3&rft.spage=379&rft.epage=389&rft.pages=379-389&rft.issn=1364-2812&rft.eissn=1463-6417&rft_id=info:doi/10.1080/13642818508240609&rft_dat=%3Cproquest_hal_p%3E1298104606%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298104606&rft_id=info:pmid/&rfr_iscdi=true |