Electronic charge transport in high-resistivity semiconductors

The paper deals with macroscopic charge transport, i.e. with drift and diffusion equations in which the intrinsic properties of the material are 'summarized' in terms of given constants. Specifically, it concerns itself with minority carrier injection into near-insulating solids, and with its effect on the prevailing field, recombination, and carrier concentration contours, as well as the overall measured resistance of the system. The corresponding equations have to be solved numerically, and are shown to be very sensitive to the assumed boundary conditions. These considerations are of substantial importance for the interpretation of electrical measurements on semi-insulators, and the design of future experiments.