Current Induced Potential Well in Compensated Semiconductors

To obtain high resistivity samples in the case of III‐V compounds such as GaAs or InP, deep levels are often used as compensating centers for residual shallow dopants. These levels usually have very different capture cross sections for electrons (σn) and holes (σp). We consider here a GaAs P+‐semi‐i...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 1996-11, Vol.158 (1), p.137-142
Hauptverfasser:	Manifacier, J. C., Ardebili, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Engineering Sciences Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics
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