Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors

We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steady-state photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing...

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Veröffentlicht in:	Thin solid films 2005-12, Vol.493 (1-2), p.319-324
Hauptverfasser:	Schmidt, J.A., Longeaud, C., Kleider, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Density of states Electrical properties and measurements Electronic transport in condensed matter Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Photoconductivity Physics Semiconductors Thermooptical and photothermal effects
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