Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Microelectronics and reliability 2007-10, Vol.47, p.1639-1642
Hauptverfasser:	Faqir, Mohamed, Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G., Labat, Nathalie, Dua, Christian, Touboul, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Micro and nanotechnologies Microelectronics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1642
container_issue
container_start_page	1639
container_title	Microelectronics and reliability
container_volume	47
creator	Faqir, Mohamed Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G. Labat, Nathalie Dua, Christian Touboul, A.
description
format	Article
fullrecord	<record><control><sourceid>hal</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00199736v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00199736v1</sourcerecordid><originalsourceid>FETCH-hal_primary_oai_HAL_hal_00199736v13</originalsourceid><addsrcrecordid>eNqVik8LgjAcQEcUZH--w64dBpuKy6OIZVCdPHQbP3TiYqnsNwL79BX0BTo8HjzejARiL0OWxuI2JwHnYcJCKeIlWSHeOeeSCxGQU96Bg9prZ17gzdBT6JsPYCc0SIeWegcjc9qC1w3Vbatrj9T0NLNHyJAd4UrL4lLhhixasKi3P6_J7lBUeck6sGp05gFuUgMYVWZn9W2cizSVUfIU0T_vGzQCQJU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs</title><source>Access via ScienceDirect (Elsevier)</source><creator>Faqir, Mohamed ; Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G. ; Labat, Nathalie ; Dua, Christian ; Touboul, A.</creator><creatorcontrib>Faqir, Mohamed ; Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G. ; Labat, Nathalie ; Dua, Christian ; Touboul, A.</creatorcontrib><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><language>eng</language><publisher>Elsevier</publisher><subject>Engineering Sciences ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>Microelectronics and reliability, 2007-10, Vol.47, p.1639-1642</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-2714-849X ; 0000-0002-2714-849X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00199736$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Faqir, Mohamed</creatorcontrib><creatorcontrib>Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G.</creatorcontrib><creatorcontrib>Labat, Nathalie</creatorcontrib><creatorcontrib>Dua, Christian</creatorcontrib><creatorcontrib>Touboul, A.</creatorcontrib><title>Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs</title><title>Microelectronics and reliability</title><subject>Engineering Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqVik8LgjAcQEcUZH--w64dBpuKy6OIZVCdPHQbP3TiYqnsNwL79BX0BTo8HjzejARiL0OWxuI2JwHnYcJCKeIlWSHeOeeSCxGQU96Bg9prZ17gzdBT6JsPYCc0SIeWegcjc9qC1w3Vbatrj9T0NLNHyJAd4UrL4lLhhixasKi3P6_J7lBUeck6sGp05gFuUgMYVWZn9W2cizSVUfIU0T_vGzQCQJU</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Faqir, Mohamed</creator><creator>Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G.</creator><creator>Labat, Nathalie</creator><creator>Dua, Christian</creator><creator>Touboul, A.</creator><general>Elsevier</general><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid></search><sort><creationdate>200710</creationdate><title>Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs</title><author>Faqir, Mohamed ; Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G. ; Labat, Nathalie ; Dua, Christian ; Touboul, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-hal_primary_oai_HAL_hal_00199736v13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Engineering Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Faqir, Mohamed</creatorcontrib><creatorcontrib>Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G.</creatorcontrib><creatorcontrib>Labat, Nathalie</creatorcontrib><creatorcontrib>Dua, Christian</creatorcontrib><creatorcontrib>Touboul, A.</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Faqir, Mohamed</au><au>Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G.</au><au>Labat, Nathalie</au><au>Dua, Christian</au><au>Touboul, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs</atitle><jtitle>Microelectronics and reliability</jtitle><date>2007-10</date><risdate>2007</risdate><volume>47</volume><spage>1639</spage><epage>1642</epage><pages>1639-1642</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><pub>Elsevier</pub><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0026-2714
ispartof	Microelectronics and reliability, 2007-10, Vol.47, p.1639-1642
issn	0026-2714 1872-941X
language	eng
recordid	cdi_hal_primary_oai_HAL_hal_00199736v1
source	Access via ScienceDirect (Elsevier)
subjects	Engineering Sciences Micro and nanotechnologies Microelectronics
title	Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T07%3A36%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20and%20analysis%20of%20trap-related%20effects%20in%20AlGaAs-GaN%20HEMTs&rft.jtitle=Microelectronics%20and%20reliability&rft.au=Faqir,%20Mohamed&rft.date=2007-10&rft.volume=47&rft.spage=1639&rft.epage=1642&rft.pages=1639-1642&rft.issn=0026-2714&rft.eissn=1872-941X&rft_id=info:doi/&rft_dat=%3Chal%3Eoai_HAL_hal_00199736v1%3C/hal%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true