Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

The effects of processing parameters on the properties of tantalum nitride thin films deposited by radio frequency reactive sputtering have been investigated. The influence of the N 2 partial and (Ar + N 2) total gas pressures as well as the sputtering power on the microstructure and electrical prop...

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Veröffentlicht in:	Journal of alloys and compounds 2008-09, Vol.464 (1), p.526-531
Hauptverfasser:	Nazon, J., Sarradin, J., Flaud, V., Tedenac, J.C., Fréty, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Material chemistry Materials science Methods of deposition of films and coatings film growth and epitaxy Microstructure Nitride materials Physics Thin films Vapour deposition X-ray diffraction
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