Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate

Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate

The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes...

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Veröffentlicht in:Applied physics letters 2007-01, Vol.90 (2)
Hauptverfasser: Dkhil, Brahim, Defaÿ, Emmanuel, Guillan, Julie
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Chemical Physics
Condensed Matter
Materials Science
Physics
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Defaÿ, Emmanuel
Guillan, Julie
description The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.
doi_str_mv 10.1063/1.2430915
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fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00176618v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00176618v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-79b551ea037f90b5572b33079390798819ec2aaa055129a9bed8548cc5387ddf3</originalsourceid><addsrcrecordid>eNpFUE1Lw0AQXUTBWD34D_bqIXUm083uHmvRVghUaD0vm2RDV9KkZFfBf2-CRS_vY3hvDo-xe4Q5Qk6POM8WBBrFBUsQpEwJUV2yBAAozbXAa3YTwsdoRUaUsOUuDtZ3gfuOP9m93xKPh1E3vj3y2p364KOred_Fnr_FtOrtZHeeh88yjNXobtlVY9vg7s48Y-8vz_vVJi2269fVskirLKeYSl0Kgc4CyUbDqGVWEoHUpEdQCrWrMmstjKlMW126WomFqipBStZ1QzP28Pv3YFtzGvzRDt-mt95sloWZbgAo8xzVF_5nq6EPYXDNXwHBTDsZNOed6AdVp1dJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Dkhil, Brahim ; Defaÿ, Emmanuel ; Guillan, Julie</creator><creatorcontrib>Dkhil, Brahim ; Defaÿ, Emmanuel ; Guillan, Julie</creatorcontrib><description>The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2430915</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Chemical Physics ; Condensed Matter ; Materials Science ; Physics</subject><ispartof>Applied physics letters, 2007-01, Vol.90 (2)</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-79b551ea037f90b5572b33079390798819ec2aaa055129a9bed8548cc5387ddf3</citedby><cites>FETCH-LOGICAL-c263t-79b551ea037f90b5572b33079390798819ec2aaa055129a9bed8548cc5387ddf3</cites><orcidid>0000-0002-9862-625X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00176618$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Dkhil, Brahim</creatorcontrib><creatorcontrib>Defaÿ, Emmanuel</creatorcontrib><creatorcontrib>Guillan, Julie</creatorcontrib><title>Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate</title><title>Applied physics letters</title><description>The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.</description><subject>Chemical Physics</subject><subject>Condensed Matter</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNpFUE1Lw0AQXUTBWD34D_bqIXUm083uHmvRVghUaD0vm2RDV9KkZFfBf2-CRS_vY3hvDo-xe4Q5Qk6POM8WBBrFBUsQpEwJUV2yBAAozbXAa3YTwsdoRUaUsOUuDtZ3gfuOP9m93xKPh1E3vj3y2p364KOred_Fnr_FtOrtZHeeh88yjNXobtlVY9vg7s48Y-8vz_vVJi2269fVskirLKeYSl0Kgc4CyUbDqGVWEoHUpEdQCrWrMmstjKlMW126WomFqipBStZ1QzP28Pv3YFtzGvzRDt-mt95sloWZbgAo8xzVF_5nq6EPYXDNXwHBTDsZNOed6AdVp1dJ</recordid><startdate>20070108</startdate><enddate>20070108</enddate><creator>Dkhil, Brahim</creator><creator>Defaÿ, Emmanuel</creator><creator>Guillan, Julie</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-9862-625X</orcidid></search><sort><creationdate>20070108</creationdate><title>Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate</title><author>Dkhil, Brahim ; Defaÿ, Emmanuel ; Guillan, Julie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-79b551ea037f90b5572b33079390798819ec2aaa055129a9bed8548cc5387ddf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Chemical Physics</topic><topic>Condensed Matter</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dkhil, Brahim</creatorcontrib><creatorcontrib>Defaÿ, Emmanuel</creatorcontrib><creatorcontrib>Guillan, Julie</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dkhil, Brahim</au><au>Defaÿ, Emmanuel</au><au>Guillan, Julie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate</atitle><jtitle>Applied physics letters</jtitle><date>2007-01-08</date><risdate>2007</risdate><volume>90</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2430915</doi><orcidid>https://orcid.org/0000-0002-9862-625X</orcidid></addata></record>
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subjects Chemical Physics
Condensed Matter
Materials Science
Physics
title Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T10%3A19%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Strains%20in%20BaTiO3%20thin%20film%20deposited%20onto%20Pt-coated%20Si%20substrate&rft.jtitle=Applied%20physics%20letters&rft.au=Dkhil,%20Brahim&rft.date=2007-01-08&rft.volume=90&rft.issue=2&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2430915&rft_dat=%3Chal_cross%3Eoai_HAL_hal_00176618v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true